1HN04CH-TL-W Discrete Semiconductor Products |
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Allicdata Part #: | 1HN04CH-TL-WOSTR-ND |
Manufacturer Part#: |
1HN04CH-TL-W |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 0.27A SOT-23 |
More Detail: | N-Channel 100V 270mA (Ta) Surface Mount 3-CPH |
DataSheet: | 1HN04CH-TL-W Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 270mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 140mA, 10V |
Vgs(th) (Max) @ Id: | 2.6V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.9nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 15pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-CPH |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 1HN04CH-TL-W is an N-Channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It has a very small threshold voltage, making it useful in low-power applications like battery-driven devices. The 1HN04CH-TL-W is a single transistor, meaning it consists of just one active region between two terminals.
The 1HN04CH-TL-W offers high-speed switching with low gate-source capacitance. It can handle large peak currents while exhibiting low ON-state resistance. This makes it ideal for applications such as switching power converters, voltage regulators, and PWM motor drivers. The 1HN04CH-TL-W has a built-in electrostatic discharge protection that helps ensure reliable operation in harsh environments.
The 1HN04CH-TL-W works by using the transistor\'s main terminal, called the gate, to control the flow of electrons between the source and drain terminals. By applying a voltage to the gate, the MOSFET can be switched on and off. This switching is used to control the current through the MOSFET, which in turn can be used to control the voltage output from a circuit.
When the gate voltage is low, no current flows through the transistor, so it is in an "off" state. When an appropriate voltage is applied to the gate, it creates an electric field that attracts electrons and activates the transistor, allowing current to pass. This is known as the "on" state. The amount of current that can be passed is determined by the MOSFET\'s width-length ratio. This ratio can be adjusted to match the desired current.
The 1HN04CH-TL-W is a popular choice for low-power applications such as small embedded circuits. It is well-suited to handle a wide range of loads, from microamps to amps, while exhibiting a low quiescent current. It is also relatively easy to integrate into existing low-voltage circuits due to its low gate capacitance.
In summary, the 1HN04CH-TL-W is an ideal solution for applications where high-speed switching, low ON-state resistance, and low power consumption are desired. Its internal ESD protection helps ensure reliable operation in harsh environments. Its low capacitance and low threshold voltage make it ideal for low-voltage circuits. With its wide range of capabilities and low cost, the 1HN04CH-TL-W is a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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1HN04CH-TL-W | ON Semicondu... | -- | 3000 | MOSFET N-CH 100V 0.27A SO... |
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