1HP04CH-TL-W Discrete Semiconductor Products |
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Allicdata Part #: | 1HP04CH-TL-WOSTR-ND |
Manufacturer Part#: |
1HP04CH-TL-W |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 100V 0.17A SOT-23 |
More Detail: | P-Channel 100V 170mA (Ta) Surface Mount 3-CPH |
DataSheet: | 1HP04CH-TL-W Datasheet/PDF |
Quantity: | 9000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 18 Ohm @ 80mA, 10V |
Vgs(th) (Max) @ Id: | 2.6V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.9nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 14pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-CPH |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The 1HP04CH-TL-W is a n-channel MOSFET designed for switching and linear application in high-voltage and high-current applications. It is an ideal choice for applications requiring fast switching, low-dissipation, and large output drive capability. The 1HP04CH-TL-W is a single, power MOSFET device with an output voltage and current rating of up to 600V and 130A respectively.
The 1HP04CH-TL-W belongs to the family of single power MOSFETs (Field-Effect Transistors). It is a four-terminal device with a source, drain, and gate as well as a substrate that provides electrical connections between the other three terminals. In a power MOSFET, the source and drain terminals are used to supply the power to the device and the control voltage is applied to the gate. When used as a switch, the power MOSFETs can be used to control the flow of current. When used as a linear device, the power MOSFETs can be used for voltage regulation, power conditioning and many other applications.
The 1HP04CH-TL-W is a vertical DMOS power device, meaning it uses vertical structures fabricated from silicon. This allows for enhanced performance characteristics. The vertical structures are composed of P-type and N-type regions, separated by insulation layers. The control gate is then connected to the P-type and N-type regions, enabling effective conduction of current between the source and the drain over a wide range of gate voltage levels.
When used as a switch, the 1HP04CH-TL-W has a maximum drain-source voltage of 600V and a maximum drain-source current of 130A. At the same time, it has low drain-source on resistance of 5.95mΩ and can operate at frequencies up to 1MHz. These characteristics make it an ideal choice for applications that require fast switching, low-dissipation and high output drive capability.
The 1HP04CH-TL-W can also be used as a linear device for voltage regulation, power conditioning and other applications. In linear mode, the 1HP04CH-TL-W offers low drain-source on resistance of 5.95mΩ, an adjustable gate threshold voltage and an adjustable gate-source voltage. This makes it an ideal choice for power source conditioning and power conversion applications.
The 1HP04CH-TL-W can be used in a wide range of high voltage and high current applications. It is well suited for applications that require fast switching, low-dissipation and large output drive capability such as power supplies, motor control, lighting and instrumentation systems. It is also an ideal choice for voltage regulation, power conditioning, and other such applications.
The specific data is subject to PDF, and the above content is for reference
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