Allicdata Part #: | 1N4003-N-0-3-APMS-ND |
Manufacturer Part#: |
1N4003-N-0-3-AP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 200V 1A DO41 |
More Detail: | Diode Standard 200V 1A (DC) Through Hole DO-41 |
DataSheet: | 1N4003-N-0-3-AP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -- |
Description
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1N4003-N-0-3-AP is a diode belonging to the family of rectifiers, a type of electrical component widely used for voltage regulation, signal switching and waveform shaping. This diode plays a key role in the modern day electrical appliances and other equipment.Rectifiers are devices used to convert alternating current (AC) to direct current (DC). Rectifiers consist of two elements: a diode and a transformer. They generally consist of a diode that acts as a one-way switch for currents and a transformer that converts AC voltage to a lower value DC voltage. Rectifiers are important components of any electrical equipment, from everyday home appliances to critical industrial and medical devices.1N4003-N-0-3-AP is a silicon, fast recovery rectifier diode specifically designed to provide the highest performance in modern day, high power systems. It has a maximum current rating of 3 A, a forward voltage drop of 1.1 volts and a temperature coefficient between 2 and 75 ppm/˚C. This diode can also work at a temperature range of -75 to +175 ˚C.The main application of this diode is as a rectifier, converter and protector in various electrical and electronic circuits. It is typically used in switching power supplies, power-line voltage converters, high power transistors, laser diodes, TV and monitors, high frequency switching devices and a variety of RF and microwave devices. The diode can also be used in rectification circuits for low frequency and high frequency signals, current sensing circuits and as an inrush current smoother.In terms of its working principle, 1N4003-N-0-3-AP is a diode that has a forward and reverse bias characteristic that allows it to restrict the flow of current between the two ends of the device. When the voltage at the anode of the diode is lower than the cathode, the diode is negatively biased, and no current flows. On the other hand, when the voltage at the anode is greater than the cathode, the diode is forward biased and current flows through the diode. This is known as the rectification process, where the alternating current is converted to direct current, with only half of the cycle of the alternating current passing through. The main advantage of 1N4003-N-0-3-AP, compared to other fast recovery rectifier diodes, is its low forward voltage drop and fast switching speed. This leads to better overall power efficiency and improved power quality in the circuit. Additionally, the device has a low temperature coefficient, meaning that the temperature of the device remains stable and unaffected by changes in the environment. In conclusion, 1N4003-N-0-3-AP is a diode belonging to the family of rectifiers that has a wide range of applications in modern-day switching and power supply systems. It is a fast recovery rectifier diode that has a low forward voltage drop and fast switching speed. This leads to improved power efficiency and robustness in any electrical and electronic circuits that require rectification of an alternating current.The specific data is subject to PDF, and the above content is for reference
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1N4003E-E3/73 | Vishay Semic... | 0.04 $ | 18000 | DIODE GEN PURP 200V 1A DO... |
1N4007E-E3/53 | Vishay Semic... | 0.06 $ | 15000 | DIODE GEN PURP 1KV 1A DO2... |
1N4007TA | SMC Diode So... | 0.02 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
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1N4007B-G | Comchip Tech... | 0.13 $ | 715 | DIODE GEN PURP 1KV 1A DO4... |
1N4007T-G | Comchip Tech... | 0.01 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001G-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4001GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 50V 1A DO2... |
1N4007FFG | ON Semicondu... | 0.02 $ | 3000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007-G | Comchip Tech... | 0.01 $ | 190000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-TP | Micro Commer... | -- | 90000 | DIODE GEN PURP 50V 1A DO4... |
1N4005-TP | Micro Commer... | 0.01 $ | 80000 | DIODE GEN PURP 600V 1A DO... |
1N4001-G | Comchip Tech... | 0.01 $ | 110000 | DIODE GEN PURP 50V 1A DO4... |
1N4002-TP | Micro Commer... | 0.01 $ | 25000 | DIODE GEN PURP 100V 1A DO... |
1N4001-T | Diodes Incor... | -- | 125000 | DIODE GEN PURP 50V 1A DO4... |
1N4003-T | Diodes Incor... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4002-T | Diodes Incor... | 0.02 $ | 35000 | DIODE GEN PURP 100V 1A DO... |
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002RLG | ON Semicondu... | -- | 50000 | DIODE GEN PURP 100V 1A DO... |
1N4003RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4006RLG | ON Semicondu... | 0.02 $ | 5000 | DIODE GEN PURP 800V 1A AX... |
1N4005RLG | ON Semicondu... | -- | 10000 | DIODE GEN PURP 600V 1A DO... |
1N4007GTA | SMC Diode So... | 0.02 $ | 10000 | DIODE GEN PURP 1KV 1A DO4... |
1N4004-G | Comchip Tech... | 0.02 $ | 45000 | DIODE GEN PURP 400V 1A DO... |
1N4007-E3/54 | Vishay Semic... | -- | 55000 | DIODE GEN PURP 1KV 1A DO2... |
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