
Allicdata Part #: | 1N4006GHB0G-ND |
Manufacturer Part#: |
1N4006GHB0G |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 800V 1A DO204AL |
More Detail: | Diode Standard 800V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | ![]() |
Quantity: | 1000 |
20000 +: | $ 0.01912 |
Series: | Automotive, AEC-Q101 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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1N4006GHB0G Application Field and Working Principle
The 1N4006GHB0G is a silicon rectifier diode that is rated for a peak reverse voltage of 600 volts. It is a part of a group of rectifier diodes that include the 1N4001GHB0G through 1N4007GHB0G series. As such, it is an important component in the world of electronics.
Applications
The 1N4006GHB0G is typically used to conduct current in one direction while blocking current in the opposite direction. This type of diode is primarily used to rectify alternating current (ATC) to direct current (DC). It is suitable for rectifying highvoltage, low-frequency AC current, such as mains power supply. This kind of diode is usually used in power supplies, TVs, radios, automotive charging systems, and many other electronic devices.
Working Principle
A diode is a two-terminal electronic component that can be used as a switch or rectifier. In the 1N4006GHB0G, electric current flows easily from the anode to the cathode, but it does not allow current to flow in the opposite direction. This means the diode acts as a switch, allowing electricity to pass when the current is flowing in the right direction, and blocking it when the direction is reversed. This allows it to be used as a rectifier in alternating electric current circuits.
The 1N4006GHB0G is used for rectifying AC electricity. It works on the principle of the formation of a depletion region. This depletion region is created when electrons from the n-side of the junction flow to the p-side. As soon as a voltage is applied to the diode, the depletion region widens, making it more difficult for current to flow in the opposite direction.
When the voltage of the AC current being applied to the diode is greater than the peak reverse voltage, current will flow through the diode in one direction, which is referred to as the forward direction. When the AC current is less than the peak reverse voltage, the diode will not conduct any current. This allows the diode to act as a rectifier, converting AC electricity to DC electricity in a process known as rectification.
Conclusion
The 1N4006GHB0G rectifier diode is a useful component for converting alternating current to direct current in a variety of applications. It is rated for a peak reverse voltage of 600 volts and works by allowing electric current to pass in one direction while blocking its flow in the opposite direction. This type of diode is particularly useful in power supplies, TVs, radios, automotive charging systems, and many other electronic devices.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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1N4002GPE-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4007GPE-E3/53 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4006GP-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4007GHA0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 1A DO204AL... |
1N4004GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4002GL-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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1N4001G B0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4006L-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4003-N-0-1-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4004E-E3/73 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4001GPE-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4006-N-0-3-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4006GHA0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4005GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4055R | Powerex Inc. | 48.46 $ | 1000 | DIODE GEN PURP 900V 275A ... |
1N4099UR-1 | Microsemi Co... | 2.58 $ | 1000 | ZENER DIODEZener Diode |
1N4007-TP | Micro Commer... | 0.01 $ | 1055000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001GPEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4002 TR | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO41Dio... |
1N4006GHB0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4002RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4002-N-0-1-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4007-N-2-3-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO-... |
1N4003-E3/54 | Vishay Semic... | -- | 11000 | DIODE GEN PURP 200V 1A DO... |
1N4007-E3/73 | Vishay Semic... | -- | 18000 | DIODE GEN PURP 1KV 1A DO2... |
1N4004GPEHE3/91 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4004GPE-E3/91 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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