
Allicdata Part #: | 1N4006GP-E3/54GITR-ND |
Manufacturer Part#: |
1N4006GP-E3/54 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 1A DO204AL |
More Detail: | Diode Standard 800V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | ![]() |
Quantity: | 1000 |
5500 +: | $ 0.05061 |
11000 +: | $ 0.04614 |
27500 +: | $ 0.04316 |
55000 +: | $ 0.03969 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N4006 |
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The 1N4006GP-E3/54 is a fairly popular single rectifier diode and is primarily used in a variety of applications. It is constructed from a grade of silicon and is a switch-mode rectifier. This diode can be used in areas that require higher power dissipation and in many military and aerospace applications. The purpose of this diode is to convert alternating current into direct current.
The 1N4006GP-E3/54 diode is designed to rectify AC voltage up to 1.5kV. It is also rated for up to a 4.7A peak surge current and a 4.75A forward current. It has a reverse recovery time of less than 500ns and a forward voltage drop of 1.1V at the 4.7A peak surge current. This diode can also be used in high temperature environments because it has a maximum operating temperature of 175°C.
The working principle behind the 1N4006GP-E3/54 diode is a flow of electrons. When the diode is forward biased, an electric field is created within the diode which provides an area for the electrons to move in one direction. The electrons use this electric field to move from the anode to the cathode. This creates an electric current. When the diode is reverse biased, the electric field collapses and the electrons are no longer able to flow, so no electric current is created.
The 1N4006GP-E3/54 diode is used in many applications including power supplies, motor drives, battery charging circuits, and in automotive electronics. It is especially useful for applications requiring fast switching speeds, low capacitance and higher reliability. The 1N4006GP-E3/54 is also used in military and aerospace applications where reliability and performance in high temperature environments is critical.
In summary, the 1N4006GP-E3/54 is an extremely popular single rectifier diode that is used in a variety of applications requiring fast switching speeds, high power dissipation, and high temperature performance. Its working principle is based on the flow of electrons which provides an electric field for the electrons to move in one direction, thus creating electric current. Its applications include power supplies, motor drives, battery charging circuits, automotive electronics, and military and aerospace applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002E-E3/54 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4005GL BK | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4002GPE-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4007GPE-E3/53 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4006GP-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4007GHA0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 1A DO204AL... |
1N4004GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4002GL-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4003-N-2-2-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4001G B0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4006L-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4003-N-0-1-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4004E-E3/73 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4001GPE-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4006-N-0-3-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4006GHA0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4005GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4055R | Powerex Inc. | 48.46 $ | 1000 | DIODE GEN PURP 900V 275A ... |
1N4099UR-1 | Microsemi Co... | 2.58 $ | 1000 | ZENER DIODEZener Diode |
1N4007-TP | Micro Commer... | 0.01 $ | 1055000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001GPEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4002 TR | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO41Dio... |
1N4006GHB0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4002RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4002-N-0-1-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4007-N-2-3-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO-... |
1N4003-E3/54 | Vishay Semic... | -- | 11000 | DIODE GEN PURP 200V 1A DO... |
1N4007-E3/73 | Vishay Semic... | -- | 18000 | DIODE GEN PURP 1KV 1A DO2... |
1N4004GPEHE3/91 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4004GPE-E3/91 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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