
Allicdata Part #: | 1N4006GHA0G-ND |
Manufacturer Part#: |
1N4006GHA0G |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 800V 1A DO204AL |
More Detail: | Diode Standard 800V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | ![]() |
Quantity: | 1000 |
21000 +: | $ 0.02100 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The 1N4006GHA0G diode is a rectifier type diode, which has a high reverse voltage, in the range of 1000V, and is widely used for general purpose rectification applications. It is a single diode, with a anode and cathode terminals, and is a high performance device that can be used in applications requiring high current without compromising on reliability. The 1N4006GHA0G diode is designed to handle high surge currents, due to its strong construction and robust design.The 1N4006GHA0G diode is mainly used in the power supply and the mains rectification circuits. It can also be used in other circuits, such as in the protection of audio frequencies and DC power supplies, as well as in the switching of DC motors. The 1N4006GHA0G diode can also be used in TV sets and other electronic applications where there is a possibility of high pulses.The 1N4006GHA0G diode has a maximum reverse voltage of 1000V, and is typically used in circuits with an operating voltage of up to 500V. The maximum forward current of the 1N4006GHA0G diode is 5A, and it can handle a surge current of up to 20A for a short period of time. The working principle of the 1N4006GHA0G diode is that when a forward bias voltage is applied to the diode, a rectified current is generated through the diode’s depleted region. The voltage on the anode and cathode of the diode balances out, and the current in the circuit increases as the forward bias voltage increases. On the other hand, when a reverse bias voltage is applied to the diode, it becomes reverse-biased, and no current flows in the device.The 1N4006GHA0G diode is an ideal device for power applications, as it can handle high currents and withstand large reverse voltage. It is also highly reliable and can provide a high level of performance. The 1N4006GHA0G diode is also a cost effective solution, making it a popular choice among electronics professionals.
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Part Number | Manufacturer | Price | Quantity | Description |
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1N4007GPE-E3/53 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4006GP-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
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1N4002GL-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4003-N-2-2-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4001G B0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4006L-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4003-N-0-1-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4004E-E3/73 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4001GPE-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4006-N-0-3-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4006GHA0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4005GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
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1N4001GPEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4002 TR | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO41Dio... |
1N4006GHB0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4002RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4002-N-0-1-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4007-N-2-3-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO-... |
1N4003-E3/54 | Vishay Semic... | -- | 11000 | DIODE GEN PURP 200V 1A DO... |
1N4007-E3/73 | Vishay Semic... | -- | 18000 | DIODE GEN PURP 1KV 1A DO2... |
1N4004GPEHE3/91 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4004GPE-E3/91 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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