
Allicdata Part #: | 1N4004-E3/73GI-ND |
Manufacturer Part#: |
1N4004-E3/73 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 1A DO204AL |
More Detail: | Diode Standard 400V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.02739 |
6000 +: | $ 0.02381 |
15000 +: | $ 0.02024 |
30000 +: | $ 0.01905 |
75000 +: | $ 0.01786 |
150000 +: | $ 0.01588 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | 1N4004 |
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Diodes - Rectifiers - Single is one of the most important categories of electrical components. One of the most commonly used components in this category is the 1N4004-E3/73 semiconductor diode, which plays a vital role in many electrical systems. This write-up takes an in-depth look at the application field and working principle of the 1N4004-E3/73 diode.
The 1N4004-E3/73 diode is a four-layer, semiconductor diode built to offer a wide range of features and advantages over other diodes. It is rated for operation at a peak forward surge current of up to 1.5A and can handle reverse breakdown voltages up to a maximum of 1KV. It is also designed for operation in the frequency range of 0-30MHz, has a junction temperature range of between -40°C to +125°C, and a storage temperature range of -50°C - 150°C.
One of the primary applications for the 1N4004-E3/73 diode is as part of a full-wave bridge rectifier. Bridge rectifiers are commonly used in AC-DC power supplies to convert AC power from the mains supply into a regulated DC voltage. The 1N4004-E3/73 diode is well suited to this task, thanks to its features noted earlier and its high surge-current rating of 1.5A. It can also be used in half-wave or any configuration of full-wave rectification.
The working principle of the 1N4004-E3/73 diode is based on its construction, which is essentially a four-layer semiconductor device with a P-type and an N-type semiconductor sandwiched together. A P-N junction is formed at the point where the P-type and N-type semiconductor materials meet. When a diode is forward-biased in a circuit, current can flow from the Anode (the P-type layer) to the Cathode (the N-type layer). For this to occur, a voltage greater than the Breakdown Voltage must be applied to the diode, which causes it to enter a conducting state. When the Voltage is removed or reduces below the Breakdown Voltage, the diode enters a non-conducting state. The 1N4004-E3/73 diode is designed to be able to handle this situation reliably, and its surge-current rating allows it to cope with transient high-currents that may occur when the diode is switched from one state to another.
Another popular application for the 1N4004-E3/73 diode is as a part of an inverter circuit. Inverters are commonly used to convert DC power into AC power, which is then used to power electronics such as a laptop. The 1N4004-E3/73 diode is particularly suited to this application, due to its robust design and its surge-current rating of 1.5A. When used as part of an inverter circuit, the 1N4004-E3/73 diode acts as a switch, allowing current to flow in one direction only and preventing it from flowing in the opposite direction.
The 1N4004-E3/73 diode can also be used as a stabilizer in power supplies. It is used to limit the voltage in a circuit, preventing damage to components which may be caused by an over-voltage condition. It is also used to provide protection against electrostatic noise, and to suppress transients on the power line. This is particularly useful in high-frequency applications, as the 1N4004-E3/73 diode has a wide frequency range of 0-30MHz, making it suitable for use in high-frequency applications.
The 1N4004-E3/73 diode is a versatile, four-layer semiconductor device that can be used in a wide range of applications. Its peak surge-current rating of 1.5A and high breakdown voltage of 1KV make it particularly suited to power conversion, rectification and stabilization applications. Its wide frequency range of 0-30MHz also makes it suitable for use in high-frequency applications. As such, the 1N4004-E3/73 diode has become one of the most popular and widely used semiconductor components in the industry today.
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Part Number | Manufacturer | Price | Quantity | Description |
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1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002E-E3/54 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4005GL BK | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4002GPE-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4007GPE-E3/53 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4006GP-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4007GHA0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 1A DO204AL... |
1N4004GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4002GL-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4003-N-2-2-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4001G B0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4006L-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4003-N-0-1-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4004E-E3/73 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4001GPE-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4006-N-0-3-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4006GHA0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4005GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4055R | Powerex Inc. | 48.46 $ | 1000 | DIODE GEN PURP 900V 275A ... |
1N4099UR-1 | Microsemi Co... | 2.58 $ | 1000 | ZENER DIODEZener Diode |
1N4007-TP | Micro Commer... | 0.01 $ | 1055000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001GPEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4002 TR | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO41Dio... |
1N4006GHB0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4002RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4002-N-0-1-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4007-N-2-3-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO-... |
1N4003-E3/54 | Vishay Semic... | -- | 11000 | DIODE GEN PURP 200V 1A DO... |
1N4007-E3/73 | Vishay Semic... | -- | 18000 | DIODE GEN PURP 1KV 1A DO2... |
1N4004GPEHE3/91 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4004GPE-E3/91 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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