Allicdata Part #: | 1N4006-N-0-4-APMS-ND |
Manufacturer Part#: |
1N4006-N-0-4-AP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 800V 1A DO-41 |
More Detail: | Diode Standard 800V 1A (DC) Through Hole DO-41 |
DataSheet: | 1N4006-N-0-4-AP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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1N4006-N-0-4-AP Application Field and Working Principle
The 1N4006-N-0-4-AP is a member of the 1N400X family of rectifier diodes and is classified into the Diodes, Rectifiers, and Single (1N4006-N-0-4-AP) category. It is typically used in applications where the rectification of a reverse-biased voltage is necessary. The 1N4006-N-0-4-AP offers high-performance rectification capabilities, with a maximum peak repetitive reverse voltage of 400 volts and an average forward current of 1A. It is an ideal solution for use in a variety of rectified power supplies, including AC/DC switching power supplies, AC motor controllers, and other electrochemical or inductive circuits.The 1N4006-N-0-4-AP is constructed of two layers of semiconductor material, typically two silicon-based substrates. These two semiconductor layers are connected to each other through a diode junction, which permits current to pass in one direction, allowing it to act as a rectifier. The two layers are electrically separated by a terminal region, which acts as a resistor. This terminal region allows the diode to be polarized and can be used for biasing the current flow through the device.When the 1N4006-N-0-4-AP is in the forward-biased position, it allows current to pass through it from the anode to the cathode due to the depleted n-type layer. This current creates a flow of charge which is referred to as direct current (DC). When the diode is in the reverse-biased position, however, the current is blocked, and no charge is created. This is because the depletion region around the cathode-anode junction is thicker, inhibiting the flow of current.The 1N4006-N-0-4-AP is a versatile device, and its applications include power rectification, voltage clamping, voltage switching, and frequency setting. It can be used in both AC and DC circuits and is suitable for a wide range of temperatures, from -55 degrees Celsius (elsius) to 125 degrees Celsius (C). It is also resistant to vibration, shock, and moisture, and is an ideal choice for use in a wide variety of applications where rectification is necessary.In summary, the 1N4006-N-0-4-AP is a rectifier diode in the 1N400X series, typically used in applications requiring rectification of an incoming reverse-biased voltage. It is constructed of two layers of semiconductor material, connected via a diode junction, and includes a terminal region which allows it to be polarized and used for biasing the current flow. Its applications include power rectification, voltage clamping, voltage switching, and frequency setting. It has a maximum peak repetitive reverse voltage of 400 volts and an average forward current of 1A, making it a reliable and versatile solution for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N4003G | ON Semicondu... | -- | 30826 | DIODE GEN PURP 200V 1A DO... |
1N4002G | ON Semicondu... | -- | 17034 | DIODE GEN PURP 100V 1A DO... |
1N4005G | ON Semicondu... | -- | 20855 | DIODE GEN PURP 600V 1A DO... |
1N4004G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4005G A0G | Taiwan Semic... | 0.04 $ | 21000 | DIODE GEN PURP 600V 1A DO... |
1N4003E-E3/73 | Vishay Semic... | 0.04 $ | 18000 | DIODE GEN PURP 200V 1A DO... |
1N4007E-E3/53 | Vishay Semic... | 0.06 $ | 15000 | DIODE GEN PURP 1KV 1A DO2... |
1N4007TA | SMC Diode So... | 0.02 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007GP-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A DO4... |
1N4003-B | Diodes Incor... | 0.15 $ | 2060 | DIODE GEN PURP 200V 1A DO... |
1N4007B-G | Comchip Tech... | 0.13 $ | 715 | DIODE GEN PURP 1KV 1A DO4... |
1N4007T-G | Comchip Tech... | 0.01 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001G-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4001GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 50V 1A DO2... |
1N4007FFG | ON Semicondu... | 0.02 $ | 3000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007-G | Comchip Tech... | 0.01 $ | 190000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-TP | Micro Commer... | -- | 90000 | DIODE GEN PURP 50V 1A DO4... |
1N4005-TP | Micro Commer... | 0.01 $ | 80000 | DIODE GEN PURP 600V 1A DO... |
1N4001-G | Comchip Tech... | 0.01 $ | 110000 | DIODE GEN PURP 50V 1A DO4... |
1N4002-TP | Micro Commer... | 0.01 $ | 25000 | DIODE GEN PURP 100V 1A DO... |
1N4001-T | Diodes Incor... | -- | 125000 | DIODE GEN PURP 50V 1A DO4... |
1N4003-T | Diodes Incor... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4002-T | Diodes Incor... | 0.02 $ | 35000 | DIODE GEN PURP 100V 1A DO... |
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002RLG | ON Semicondu... | -- | 50000 | DIODE GEN PURP 100V 1A DO... |
1N4003RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4006RLG | ON Semicondu... | 0.02 $ | 5000 | DIODE GEN PURP 800V 1A AX... |
1N4005RLG | ON Semicondu... | -- | 10000 | DIODE GEN PURP 600V 1A DO... |
1N4007GTA | SMC Diode So... | 0.02 $ | 10000 | DIODE GEN PURP 1KV 1A DO4... |
1N4004-G | Comchip Tech... | 0.02 $ | 45000 | DIODE GEN PURP 400V 1A DO... |
1N4007-E3/54 | Vishay Semic... | -- | 55000 | DIODE GEN PURP 1KV 1A DO2... |
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