1N4006-N-0-4-AP Allicdata Electronics
Allicdata Part #:

1N4006-N-0-4-APMS-ND

Manufacturer Part#:

1N4006-N-0-4-AP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE GEN PURP 800V 1A DO-41
More Detail: Diode Standard 800V 1A (DC) Through Hole DO-41
DataSheet: 1N4006-N-0-4-AP datasheet1N4006-N-0-4-AP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Description

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1N4006-N-0-4-AP Application Field and Working Principle

The 1N4006-N-0-4-AP is a member of the 1N400X family of rectifier diodes and is classified into the Diodes, Rectifiers, and Single (1N4006-N-0-4-AP) category. It is typically used in applications where the rectification of a reverse-biased voltage is necessary. The 1N4006-N-0-4-AP offers high-performance rectification capabilities, with a maximum peak repetitive reverse voltage of 400 volts and an average forward current of 1A. It is an ideal solution for use in a variety of rectified power supplies, including AC/DC switching power supplies, AC motor controllers, and other electrochemical or inductive circuits.The 1N4006-N-0-4-AP is constructed of two layers of semiconductor material, typically two silicon-based substrates. These two semiconductor layers are connected to each other through a diode junction, which permits current to pass in one direction, allowing it to act as a rectifier. The two layers are electrically separated by a terminal region, which acts as a resistor. This terminal region allows the diode to be polarized and can be used for biasing the current flow through the device.When the 1N4006-N-0-4-AP is in the forward-biased position, it allows current to pass through it from the anode to the cathode due to the depleted n-type layer. This current creates a flow of charge which is referred to as direct current (DC). When the diode is in the reverse-biased position, however, the current is blocked, and no charge is created. This is because the depletion region around the cathode-anode junction is thicker, inhibiting the flow of current.The 1N4006-N-0-4-AP is a versatile device, and its applications include power rectification, voltage clamping, voltage switching, and frequency setting. It can be used in both AC and DC circuits and is suitable for a wide range of temperatures, from -55 degrees Celsius (elsius) to 125 degrees Celsius (C). It is also resistant to vibration, shock, and moisture, and is an ideal choice for use in a wide variety of applications where rectification is necessary.In summary, the 1N4006-N-0-4-AP is a rectifier diode in the 1N400X series, typically used in applications requiring rectification of an incoming reverse-biased voltage. It is constructed of two layers of semiconductor material, connected via a diode junction, and includes a terminal region which allows it to be polarized and used for biasing the current flow. Its applications include power rectification, voltage clamping, voltage switching, and frequency setting. It has a maximum peak repetitive reverse voltage of 400 volts and an average forward current of 1A, making it a reliable and versatile solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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