Allicdata Part #: | 1N4006-N-2-1-BPMS-ND |
Manufacturer Part#: |
1N4006-N-2-1-BP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 800V 1A DO-41 |
More Detail: | Diode Standard 800V 1A (DC) Through Hole DO-41 |
DataSheet: | 1N4006-N-2-1-BP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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A diode is an electronic component that consists of two terminals. It plays an important role in the fields of electronics and semiconductors. It is a basic component of many electronic circuits and is used in many applications. 1N4006-N-2-1-BP diodes belong to the rectifiers group of diodes and are used in single applications. This article focuses on the application field and the working principle of 1N4006-N-2-1-BP diodes.
A rectifier diode, like a 1N4006-N-2-1-BP diode, is a unidirectional device that allows current to flow in one direction only. The amplitude of the output current depends on the magnitude of the input voltage. These diodes are designed to hold a maximum reverse voltage rating of 1000 volts. 1N4006-N-2-1-BP diodes are typically used in applications such as power supply, voltage regulation, signal rectification and signal switching. The rectification performance of these diodes is higher compared to other rectifiers.
In addition to the application field, this article also discusses the working principle of 1N4006-N-2-1-BP diodes. The diode consists of two terminals, an anode and a cathode. When a positive voltage is applied to the anode, the electric field across the barrier between the n-type and p-type regions increases, resulting in a current flow from the anode to the cathode. Conversely, when a negative voltage is applied to the anode, the electric field is in the opposite direction and the current flow from the anode to the cathode is blocked.
1N4006-N-2-1-BP diodes are also commonly used to control the reverse voltage in a circuit. These diodes can be used to limit the amount of reverse voltage in a diode-bridge circuit, making them ideal for use in automated power control and voltage regulation. The reverse voltage across the diode junction can be increased or decreased by changing the voltage on either the anode or the cathode. When the reverse voltage across the junction exceeds the maximum specified by the manufacturer, the diode will be forced into reverse breakdown and will fail.
The most common application of a 1N4006-N-2-1-BP diode is to protect circuits from overvoltage conditions. These diodes are commonly used in power supplies, waveform clamping circuits and other power management applications as it allows for automatic power regulation and prevents damage in critical areas of the circuit due to overvoltage.
In conclusion, 1N4006-N-2-1-BP rectifier diodes have a wide range of applications and are used in single applications. These diodes are capable of handling a maximum reverse voltage rating of 1000 volts and are used for voltage regulation, signal rectification and signal switching. The most common application of these diodes is to protect circuits from overvoltage conditions. This article has provided a brief introduction to the application field and the working principle of 1N4006-N-2-1-BP diodes.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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1N4003G | ON Semicondu... | -- | 30826 | DIODE GEN PURP 200V 1A DO... |
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1N4005G A0G | Taiwan Semic... | 0.04 $ | 21000 | DIODE GEN PURP 600V 1A DO... |
1N4003E-E3/73 | Vishay Semic... | 0.04 $ | 18000 | DIODE GEN PURP 200V 1A DO... |
1N4007E-E3/53 | Vishay Semic... | 0.06 $ | 15000 | DIODE GEN PURP 1KV 1A DO2... |
1N4007TA | SMC Diode So... | 0.02 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007GP-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A DO4... |
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1N4007B-G | Comchip Tech... | 0.13 $ | 715 | DIODE GEN PURP 1KV 1A DO4... |
1N4007T-G | Comchip Tech... | 0.01 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001G-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4001GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 50V 1A DO2... |
1N4007FFG | ON Semicondu... | 0.02 $ | 3000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007-G | Comchip Tech... | 0.01 $ | 190000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-TP | Micro Commer... | -- | 90000 | DIODE GEN PURP 50V 1A DO4... |
1N4005-TP | Micro Commer... | 0.01 $ | 80000 | DIODE GEN PURP 600V 1A DO... |
1N4001-G | Comchip Tech... | 0.01 $ | 110000 | DIODE GEN PURP 50V 1A DO4... |
1N4002-TP | Micro Commer... | 0.01 $ | 25000 | DIODE GEN PURP 100V 1A DO... |
1N4001-T | Diodes Incor... | -- | 125000 | DIODE GEN PURP 50V 1A DO4... |
1N4003-T | Diodes Incor... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4002-T | Diodes Incor... | 0.02 $ | 35000 | DIODE GEN PURP 100V 1A DO... |
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002RLG | ON Semicondu... | -- | 50000 | DIODE GEN PURP 100V 1A DO... |
1N4003RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4006RLG | ON Semicondu... | 0.02 $ | 5000 | DIODE GEN PURP 800V 1A AX... |
1N4005RLG | ON Semicondu... | -- | 10000 | DIODE GEN PURP 600V 1A DO... |
1N4007GTA | SMC Diode So... | 0.02 $ | 10000 | DIODE GEN PURP 1KV 1A DO4... |
1N4004-G | Comchip Tech... | 0.02 $ | 45000 | DIODE GEN PURP 400V 1A DO... |
1N4007-E3/54 | Vishay Semic... | -- | 55000 | DIODE GEN PURP 1KV 1A DO2... |
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