
Allicdata Part #: | 1N4007GHB0G-ND |
Manufacturer Part#: |
1N4007GHB0G |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 1A DO204AL |
More Detail: | Diode Standard 1000V 1A Through Hole DO-204AL (DO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
20000 +: | $ 0.01912 |
Series: | Automotive, AEC-Q101 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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1N4007GHB0G is the 3rd generation of high-voltage gallium-based diodes from the manufacturer. They are part of a broad family of diodes that can be classified as semiconductor rectifiers - Single Device, and are generally known as rectifiers. For end-users, they are usually used to ensure conversion of AC current (alternating current) to DC (direct current) current.
Application field of 1N4007GHB0G
The mass of 1N4007GHB0G, together with its mechanics, make it suitable for various applications, including high-frequency switching, solar panel maximum power point tracking (MPPT), integrated power systems, and power supplies.The 3rd generation of 1N4007GHB0G is designed to provide benefits such as improved withstand voltage protection and enhanced efficiency, robustness and reliability, lower total cost of ownership, better thermal management, and long pedal life.With 1N4007GHB0G in rectifier supply, designers are able to improve system efficiency by avoiding exposure to long-term changes in ambient temperature and open-loop control. The device is also applicable in a wide range of applications, including motor drives, uninterruptible power supplies and power inverters.1N4007GHB0G can also be used in various AC/DC rectification circuits such as at the input end of power supplies, DC-DC converters, for changing the AC voltage, protecting circuits and other rectification circuiting.
Working principle of 1N4007GHB0G
The 1N4007GHB0G are made out of a semiconductor material (typically silicon), and as such, have a certain amount of impedance, which is used to reduce the amplitude of the alternating current (AC) provided.When a voltage is applied to the anode of 1N4007GHB0G, a current will flow in the direction of cathode, passing through the device in the process. This current is an ac current, and is reduced in the amount of voltage it contains, due to the impedance of the device.The operation of the device is continued while the voltage is applied and will still operate even when the current flow has stopped.The 1N4007GHB0G also features a reverse voltage protection to protect the device from high voltages.
Conclusion
The 1N4007GHB0G is a high voltage gallium-based diode, with a broad range of applications such as high-frequency switching, solar panel maximum power point tracking, integrated power systems, and power supplies. Its high reliability, robusstness, and long pedal life ensures that it can be used in various ac dc circuit applications such as input end of power supplies, dc-dc converters, and protecting circuits. Its working principle involves the reduction of amplitude of alternating current (AC) by a certain amount of impedance induced by the semiconductor material (typically silicon). It also includes a reverse voltage protection which prevents from high voltages.
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