1N4045R Allicdata Electronics
Allicdata Part #:

1N4045RPX-ND

Manufacturer Part#:

1N4045R

Price: $ 38.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: DIODE GEN PURP 100V 275A DO205AB
More Detail: Diode Standard 100V 275A Chassis, Stud Mount DO-20...
DataSheet: 1N4045R datasheet1N4045R Datasheet/PDF
Quantity: 1000
30 +: $ 34.22260
Stock 1000Can Ship Immediately
$ 38.02
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 275A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 15mA @ 100V
Capacitance @ Vr, F: --
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 190°C
Base Part Number: 1N4045
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

1N4045R is a rectifier diode designed for applications requiring very low forward voltage drop. It is often used in automotive applications and in power supplies for power induction, high frequency inverters, as well as other power management applications. The 1N4045R is constructed from a high purity, lightly doped silicon material that is ideal for devices requiring high switching performance, low capacitance, and high current and voltage stacking capability.

The 1N4045R rectifier diode has a maximum forward current rating of 0.5A, maximum reverse current rating at 25°C of 1 μA ( 0.1mA in maximum junction temperature), and a maximum reverse voltage rating of 100V. It can be used in automotive applications to provide a full-wave rectification, eliminating the need for a separate rectifier in the application, resulting in the cost savings for the manufacturer.

The 1N4045R can also be used in power supplies, such as in high frequency inverters, for a low forward voltage drop. As a power semi-conductor, it is designed to be used in applications where high power efficiency and low electrical noise is needed. The low forward voltage drop of the 1N4045R provides better power efficiency, while its very low reverse leakage current (1 μA) provides very low electrical noise.

The working principle of 1N4045R is based on the PN junction, which is the junction between n-type and p-type silicon materials. This junction is created by depositing a very thin layer of n-type silicon on top of the p-type silicon. This junction then acts as a one-way valve, allowing electric current to flow through it in one direction. It is this flow of current that is responsible for the rectification effect.

The forward voltage across the diode is determined by the temperature and current rating of the diode. As the temperature rises, the voltage across the diode increases and the current decreases. This is what makes the 1N4045R superior to other rectifier diodes in high temperature and high current applications.

The 1N4045R can be used in a wide range of applications, from automotive and power management to consumer electronics. Its advantages are low forward voltage drop, low reverse leakage current and high power efficiency, which make it suitable for many applications.

The specific data is subject to PDF, and the above content is for reference

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