
Allicdata Part #: | 1N4045RPX-ND |
Manufacturer Part#: |
1N4045R |
Price: | $ 38.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | DIODE GEN PURP 100V 275A DO205AB |
More Detail: | Diode Standard 100V 275A Chassis, Stud Mount DO-20... |
DataSheet: | ![]() |
Quantity: | 1000 |
30 +: | $ 34.22260 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 275A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 15mA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-205AB, DO-9, Stud |
Supplier Device Package: | DO-205AB, DO-9 |
Operating Temperature - Junction: | -65°C ~ 190°C |
Base Part Number: | 1N4045 |
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1N4045R is a rectifier diode designed for applications requiring very low forward voltage drop. It is often used in automotive applications and in power supplies for power induction, high frequency inverters, as well as other power management applications. The 1N4045R is constructed from a high purity, lightly doped silicon material that is ideal for devices requiring high switching performance, low capacitance, and high current and voltage stacking capability.
The 1N4045R rectifier diode has a maximum forward current rating of 0.5A, maximum reverse current rating at 25°C of 1 μA ( 0.1mA in maximum junction temperature), and a maximum reverse voltage rating of 100V. It can be used in automotive applications to provide a full-wave rectification, eliminating the need for a separate rectifier in the application, resulting in the cost savings for the manufacturer.
The 1N4045R can also be used in power supplies, such as in high frequency inverters, for a low forward voltage drop. As a power semi-conductor, it is designed to be used in applications where high power efficiency and low electrical noise is needed. The low forward voltage drop of the 1N4045R provides better power efficiency, while its very low reverse leakage current (1 μA) provides very low electrical noise.
The working principle of 1N4045R is based on the PN junction, which is the junction between n-type and p-type silicon materials. This junction is created by depositing a very thin layer of n-type silicon on top of the p-type silicon. This junction then acts as a one-way valve, allowing electric current to flow through it in one direction. It is this flow of current that is responsible for the rectification effect.
The forward voltage across the diode is determined by the temperature and current rating of the diode. As the temperature rises, the voltage across the diode increases and the current decreases. This is what makes the 1N4045R superior to other rectifier diodes in high temperature and high current applications.
The 1N4045R can be used in a wide range of applications, from automotive and power management to consumer electronics. Its advantages are low forward voltage drop, low reverse leakage current and high power efficiency, which make it suitable for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002E-E3/54 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4005GL BK | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4002GPE-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4007GPE-E3/53 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4006GP-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4007GHA0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 1A DO204AL... |
1N4004GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4002GL-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4003-N-2-2-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4001G B0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4006L-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4003-N-0-1-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4004E-E3/73 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4001GPE-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4006-N-0-3-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4006GHA0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4005GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4055R | Powerex Inc. | 48.46 $ | 1000 | DIODE GEN PURP 900V 275A ... |
1N4099UR-1 | Microsemi Co... | 2.58 $ | 1000 | ZENER DIODEZener Diode |
1N4007-TP | Micro Commer... | 0.01 $ | 1055000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001GPEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4002 TR | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO41Dio... |
1N4006GHB0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4002RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4002-N-0-1-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4007-N-2-3-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO-... |
1N4003-E3/54 | Vishay Semic... | -- | 11000 | DIODE GEN PURP 200V 1A DO... |
1N4007-E3/73 | Vishay Semic... | -- | 18000 | DIODE GEN PURP 1KV 1A DO2... |
1N4004GPEHE3/91 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4004GPE-E3/91 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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