
Allicdata Part #: | 1N4050PX-ND |
Manufacturer Part#: |
1N4050 |
Price: | $ 42.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | DIODE GEN PURP 400V 275A DO205AB |
More Detail: | Diode Standard 400V 275A Chassis, Stud Mount DO-20... |
DataSheet: | ![]() |
Quantity: | 1000 |
30 +: | $ 37.97350 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 275A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 15mA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-205AB, DO-9, Stud |
Supplier Device Package: | DO-205AB, DO-9 |
Operating Temperature - Junction: | -65°C ~ 190°C |
Base Part Number: | 1N4050 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A 1N4050 is a single rectifier diode with a variety of uses, depending on the current and voltage ratings. It has a low forward voltage drop and is housed in a small discrete AC or DC package. The 1N4050 is especially suited for use in telecom, battery-powered, backlighting and switching power supply applications.
The working principle of a rectifier diode is to allow current to flow only in one direction by creating a barrier in the other direction. This is referred to as rectification. When current is applied through the anode, it will flow through the diode and create an electrical charge over the semiconductor junction, creating a potential barrier that blocks the flow of current in the reverse direction.
When the 1N4050 is used in AC applications, the peak inverse voltage (PIV) is the maximum voltage that appears across the diode junction when the diode is in reverse bias and the maximum current rating (I F ) is the maximum current that can be applied to the diode without damaging it. When used in DC applications, the forward voltage drop (V F ) is the voltage that appears across the diode junction when the diode is in forward bias and the maximum power dissipation (P D ) is the maximum power that can be dissipated inside the diode without damaging it.
In practical applications, the 1N4050 is ideal for use in telecom applications due to its low forward voltage drop and high peak inverse voltage. It is also a good choice for battery-powered, backlighting and switching power supply applications as it can handle a variety of current and voltage ratings. Further, it can be used in low-voltage and high-current switch mode power supplies, automotive applications, high-efficiency LED drivers, AC to DC converters, and regenerative drives.
Overall, the 1N4050 is a versatile single rectifier diode that is suitable for a wide range of applications, depending on its current and voltage ratings. It is capable of handling a variety of current and voltage ratings, making it perfect for telecom, battery-powered, backlighting and switching power supply application.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002E-E3/54 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4005GL BK | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4002GPE-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4007GPE-E3/53 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4006GP-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4007GHA0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 1A DO204AL... |
1N4004GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4002GL-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4003-N-2-2-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4001G B0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4006L-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4003-N-0-1-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4004E-E3/73 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4001GPE-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4006-N-0-3-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4006GHA0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4005GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4055R | Powerex Inc. | 48.46 $ | 1000 | DIODE GEN PURP 900V 275A ... |
1N4099UR-1 | Microsemi Co... | 2.58 $ | 1000 | ZENER DIODEZener Diode |
1N4007-TP | Micro Commer... | 0.01 $ | 1055000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001GPEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4002 TR | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO41Dio... |
1N4006GHB0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4002RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4002-N-0-1-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4007-N-2-3-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO-... |
1N4003-E3/54 | Vishay Semic... | -- | 11000 | DIODE GEN PURP 200V 1A DO... |
1N4007-E3/73 | Vishay Semic... | -- | 18000 | DIODE GEN PURP 1KV 1A DO2... |
1N4004GPEHE3/91 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4004GPE-E3/91 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
Diodes - General Purpose, Power, Switchi...

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

DIODE GEN PURPOSE DO-204ALDiode

DIODE GEN PURP 400V 1A DO41Diode Standar...

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

DIODE GEN PURP 400V 500MA D5ADiode Stand...
