1N4448-TP

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	75V
Current - Average Rectified (Io):	150mA
Voltage - Forward (Vf) (Max) @ If:	1V @ 100mA
Speed:	Small Signal =
Reverse Recovery Time (trr):	4ns
Current - Reverse Leakage @ Vr:	5µA @ 75V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	DO-35
Operating Temperature - Junction:	-50°C ~ 150°C
Base Part Number:	1N4448

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Background

1N4448-TP is a kind of high voltage p-n junction diode made of monolithic silicon material. It is used in high voltage rectifier. It has high breakdown voltage of 500V and forward voltage of 1.2V. Its main feature is that it has a very low reverse leakage current as low as 10uA at 25℃.

Application Field

1N4448-TP is mainly used for the high voltage rectification of voltage over 400V. It can be used in medium and high voltage switches, voltage regulators, UPS systems, ripple filters, etc. One of the most typical application fields of 1N4448-TP is high-voltage power supply. This diode is designed for low forward voltage drop and low reverse current. It can be used as switching or rectifying element or as a protective device. This diode is mainly used as the rectifying diode in the bridge circuit of high voltage switching power supplies, AC adaptors and chargers. 1N4448-TP is also suitable for various low-voltage rectifying applications such as backlight inverters, DC-to-DC converters, etc.

Working Principle

1N4448-TP diode consists of a p-n junction, an anode and a cathode. When a forward current is applied to the diode, the current will flow from the anode to the cathode. This is called forward conduction. Under the forward conduction state, the diode will not allow any current to flow in the reverse direction. This is called reverse blocking. When the reverse voltage applied to the diode reaches the breakdown voltage, the p-n junction will conduct in the reverse direction. This condition is called avalanche breakdown.Under normal working conditions, the silicon p-n junction acts as a rectifier or a barrier to the electrical current. This rectifier can convert the AC voltage into a DC voltage. The forward voltage drop across the diode is usually very small under forward conduction and is generally between 1.0 and 1.2V. The reverse voltage is usually very large and is usually between 400 and 500V.

Conclusion

1N4448-TP is a kind of p-n junction diode with high voltage rectifying capability. Its low reverse leakage current enables it to be used in switch, voltage regulator, and ripple filter applications. Its main application field are in high-voltage power supplies, AC adaptors and chargers. Its working principle is based on the rectifying properties of the silicon p-n junction, which is able to reduce the AC voltage into a DC voltage.

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