1N4448X-TP Allicdata Electronics
Allicdata Part #:

1N4448XTPMSTR-ND

Manufacturer Part#:

1N4448X-TP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE GEN PURP 75V 250MA SOD523
More Detail: Diode Standard 75V 250mA Surface Mount SOD-523
DataSheet: 1N4448X-TP datasheet1N4448X-TP Datasheet/PDF
Quantity: 80000
Stock 80000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: 1N4448
Description

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1N4448X-TP is a rectifier diode that features a low forward voltage drop, making them suitable for use in rectification and other low voltage applications. It offers high temperature operation, low reverse saturation current, and low forward voltage. It is widely used in switching power supplies, battery chargers, voltage regulator circuits, automotive applications, and other industrial applications.

The working principle of the 1N4448x-TP is based on the pn junction rectifier. The pn junction is a structure formed when two regions of a semiconductor material are doped with different impurity elements. In the case of the 1N4448x-TP, the two regions consist of a positively doped p-type layer, and a negatively doped n-type layer. The two layers form a junction between them, with a depletion region forming at the junction. When a forward bias is applied to the diode, the depletion region decreases due to increased electron hole majority carriers, allowing current to flow through the diode.

In its application fields, 1N4448x-TP is widely used in switching power supplies, battery chargers, voltage regulator circuits, automotive applications and other industrial applications. The most common usage in switching power supplies and battery chargers are in reverse polarity, short circuit protection and voltage regulation. In automotive applications, 1N4448x-TP can be used as a rectifier diode to control current and voltage levels of a device. It is also used in the protection of sensors from high voltage and in the regulation of LED loads. In general, it is very useful in applications where low forward voltage drop is desired.

The 1N4448x-TP is rated, making it suitable for use in temperatures ranging from -55°C to 125°C. Additionally, it has a low reverse saturation current, boosting its reliability in most applications.

The 1N4448x-TP is a reliable diode in many different applications. With a low forward voltage drop, it is suitable for use in rectification and other low voltage applications. It is also rated for high temperature operation, making it suitable for use in many industrial applications. Its low reverse saturation current makes it suitable for use in many applications where low forward voltage drop and improved reliability is desired.

The specific data is subject to PDF, and the above content is for reference

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