Allicdata Part #: | 1N4480TR-ND |
Manufacturer Part#: |
1N4480 TR |
Price: | $ 0.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | DIODE ZENER 43V 1.5W DO41 |
More Detail: | Zener Diode 43V 1.5W ±5% Through Hole DO-41 |
DataSheet: | 1N4480 TR Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.44100 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 43V |
Tolerance: | ±5% |
Power - Max: | 1.5W |
Impedance (Max) (Zzt): | 40 Ohms |
Current - Reverse Leakage @ Vr: | 50nA @ 34.4V |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
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1N4480 is a single Zener diode, which is widely used in electronic products. It is manufactured from high-quality silicon materials and comes with a variety of features. The 1N4480 TR is specifically designed for high voltage applications. It\'s also commonly used in a variety of other industrial and commercial applications.
The 1N4480 TR is a silicon-based diode with a breakdown voltage ranging from 40V to 400V. This makes it perfect for use in applications where a higher voltage output is required. Additionally, the diode has very low forward voltage drop, which makes it great for applications where a higher voltage is required but power efficiency is a priority.
In addition to its breakdown voltage range, the 1N4480 TR has a maximum current rating of 4-amps. This makes it suitable for applications where higher current is required by the device. However, the power dissipation of the 1N4480 TR should be considered carefully before applying the diode.
The 1N4480 TR also offers a low reverse leakage current, making it ideal for applications where a low reverse current is required. This also makes it great for applications where a low power consumption is desired. Additionally, the 1N4480 TR is highly durable and capable of withstanding high temperatures, making it great for applications in demanding environments.
The working principle behind the 1N4480 TR is simple. When an external voltage is applied across the diode, the diode\'s anode is positively charged, and the cathode is negatively charged. This causes a current to be generated, which then flows from the anode to the cathode. In applications where the external voltage is greater than the diode\'s breakdown voltage, the diode will be turned on and will act as a closed circuit.
The 1N4480 TR is a versatile and reliable diode, which is why it is used in a variety of industrial and commercial products. It is most commonly used in wayside station equipment applications such as voltage converters, attenuators, level shifters, and analog switches. Additionally, the 1N4480 TR is also used in applications such as home appliances, electric lock mechanisms, and dimming control applications.
The 1N4480 TR is a great choice for applications where high voltage, low current, and high power efficiency are desired. Thanks to its features and reliability, the 1N4480 TR is widely used in a variety of applications. As such, it is an essential component for any electronics system.
The specific data is subject to PDF, and the above content is for reference
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1N4448TR | Vishay Semic... | -- | 40000 | DIODE GEN PURP 100V 150MA... |
1N4448X-TP | Micro Commer... | -- | 80000 | DIODE GEN PURP 75V 250MA ... |
1N4448WX-TP | Micro Commer... | -- | 60000 | DIODE GEN PURP 75V 250MA ... |
1N4448W-7-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 75V 250MA ... |
1N4448WSF-7 | Diodes Incor... | -- | 60000 | DIODE GEN PURP 75V 250MA ... |
1N4448WQ-7-F | Diodes Incor... | -- | 21000 | DIODE GEN PURP 75V 250MA ... |
1N4448WS-7-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 75V 250MA ... |
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1N4448W-E3-18 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 75V 150MA ... |
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