1N4474 TR

Diodes - Zener - Single

The 1N4474TR is a type of single zener diode, which has a very wide range of applications. It is particularly suited for use in circuits that require low leakage current and a high breakdown voltage.

Description

The 1N4474TR is a single zener diode with a maximum drain-source voltage of 5.6V. It is made of silicon and has a very low leakage current of 2.5 nanoamperes. The maximum power rating at 25 degrees Celsius is 250 milliwatts. The diode has a reverse recovery time of 25 nanoseconds and a breakdown voltage of 4.7 to 5.6 volts. It also features a fast switching action and a low operating temperature.

Applications

The 1N4474TR is widely used in the following applications:

• High efficiency power supply regulation and ESD protection.
• Overvoltage protection.
• Reflow soldering applications.
• Low-voltage switching applications.
• Overvoltage and overcurrent protection circuits.
• Voltage level detection and switching.
• Zener diode arrays and voltage generators.

Working Principle

The 1N4474TR operates by allowing forward current to flow from the anode to the cathode when the cathode voltage is less than the anode voltage. This forward current creates a depletion region between the junction of the diode and the substrate that allows no current to flow until the drift region is provided with a high enough voltage to allow current to flow. This is known as the voltage breakdown voltage. Once the breakdown voltage is reached, the diode will start to conduct and current will flow in the reverse direction.

When the applied reverse voltage reaches the device’s reverse breakdown voltage, the diode will start to conduct in the reverse direction. This reverse current can be controlled by applying a series resistance in order to limit the reverse current to a desired level. This series resistance also serves to reduce the threshold voltage at which the diode will start to conduct.