1N4448 TR Allicdata Electronics
Allicdata Part #:

1N4448CSTR-ND

Manufacturer Part#:

1N4448 TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: DIODE GEN PURP 100V 150MA DO35
More Detail: Diode Standard 100V 150mA Through Hole DO-35
DataSheet: 1N4448 TR datasheet1N4448 TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 720mV @ 5mA
Speed: Small Signal =
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 25nA @ 20V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 200°C
Description

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The 1N4448 TR is a diode, more specifically a single rectifier. It is a signal diode used in oscilloscope trigger circuits with an operating voltage of 15V and a maximum forward current of 500mA. The device features a high peak current rating of 5A, making it suitable for a wide range of applications. The device withstands a maximum reverse voltage of 1kV. The 1N4448 TR can be used in various applications, including general rectification, switch control, detection and rectification of various pulse signals, and over voltage, over current, and over temperature protection. This device is also suitable for use in electrical test and measurement instrumentation, power supply, and automotive applications. The 1N4448 TR has a fairly straightforward working principle. The device is a two-terminal, PN junction diode that is made from silicon. When forward-biased, a diode allows very small electric current to flow from the P-type side to the N-type side of the junction, which is known as forward current. The forward current is mainly a consequence of majority and minority carrier diffusion across the junction. In other words, the holes and electrons diffuse across the junction to form an electrical current. When reverse biased, the voltage applied to the junction is greater than the junction\'s built-in voltage, and no current flows across the junction. This is known as the reverse blocking state. The 1N4448 TR has relatively low forward voltage drop and reverse current leakage, making it an excellent choice for applications that require a very low voltage drop and high power handling capability. This device has high surge capability and can provide excellent protection against over voltage conditions. The 1N4448 TR is ideal for a wide range of electronic applications and offers robust performance in a variety of conditions. Its low voltage drop and high power rating make it well suited for use in any application where power and performance are of paramount concern. This device is also suitable for a variety of automotive and industrial applications, making it an excellent choice for engineers who need a reliable and efficient diode solution.

The specific data is subject to PDF, and the above content is for reference

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