1N4448HWS-13-F Allicdata Electronics
Allicdata Part #:

1N4448HWS-13-FDI-ND

Manufacturer Part#:

1N4448HWS-13-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE GEN PURP 80V 250MA SOD323
More Detail: Diode Standard 80V 250mA Surface Mount
DataSheet: 1N4448HWS-13-F datasheet1N4448HWS-13-F Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 80V
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: 1N4448HWS
Description

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1N4448HWS-13-F is a type of single rectifier diode. It is used in many applications such as reversing polarity protection, voltage regulator, AC/DC power switch, temperature sensing, and half-wave rectification. It is designed to provide an efficient and reliable solution in high-temperature environments.

Features of 1N4448HWS-13-F

  • High power rating of 1.0A
  • Excellent thermal performance
  • High forward rectified current of 1A
  • High reverse voltage of 250V
  • Low forward voltage drop of 0.3V
  • Low everse current leakage of 0.8mA

Applications of 1N4448HWS-13-F

1N4448HWS-13-F is used in a variety of applications, such as:

  • Reversing polarity protection
  • Voltage regulator
  • AC/DC power switch
  • Temperature sensing
  • Half-wave rectification

These diodes are used in consumer electronics, telecommunications, power supplies, automotive, audio-visual equipment, industrial, and solar energy applications.

Working Principle of 1N4448HWS-13-F

The 1N4448HWS-13-F is a semiconductor device known as a rectifier diode. It is made up of a P-type and an N-type silicon substrate. This type of diode conducts current when a forward voltage is applied. When the voltage is reversed, no current will be able to flow through it.

The diode has a p-n junction made up of negative charges (N-type) and positive charges (P-type). When the external current and voltage are applied, the negative charges move away from the p-n junction, allowing the current to pass through. This movement of electrons produces a voltage drop across the diode, which is known as the forward voltage drop.

When the voltage is reversed, the positive charges (holes) will be attracted to the p-n junction, creating a depletion zone that does not allow current to flow. This reverse current is known as the reverse leakage current.

Conclusion

The 1N4448HWS-13-F is a single rectifier diode that is commonly used in high-temperature environments to provide an efficient and reliable solution. It has excellent thermal performance, a high power rating of 1.0A, and a high reverse voltage of 250V. It is used in many applications such as reversing polarity protection, voltage regulator, AC/DC power switch, temperature sensing, and half-wave rectification.

This diode conducts current when a forward voltage is applied and is able to block the current when the voltage is reversed due to the p-n junction and the negative and positive charges. It has a low forward voltage drop of 0.3V and a low reverse current leakage of 0.8mA.

The specific data is subject to PDF, and the above content is for reference

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