Allicdata Part #: | 1N4448HWS-13-FDI-ND |
Manufacturer Part#: |
1N4448HWS-13-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 80V 250MA SOD323 |
More Detail: | Diode Standard 80V 250mA Surface Mount |
DataSheet: | 1N4448HWS-13-F Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io): | 250mA |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 150mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 100nA @ 80V |
Capacitance @ Vr, F: | 3.5pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | 1N4448HWS |
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1N4448HWS-13-F is a type of single rectifier diode. It is used in many applications such as reversing polarity protection, voltage regulator, AC/DC power switch, temperature sensing, and half-wave rectification. It is designed to provide an efficient and reliable solution in high-temperature environments.
Features of 1N4448HWS-13-F
- High power rating of 1.0A
- Excellent thermal performance
- High forward rectified current of 1A
- High reverse voltage of 250V
- Low forward voltage drop of 0.3V
- Low everse current leakage of 0.8mA
Applications of 1N4448HWS-13-F
1N4448HWS-13-F is used in a variety of applications, such as:
- Reversing polarity protection
- Voltage regulator
- AC/DC power switch
- Temperature sensing
- Half-wave rectification
These diodes are used in consumer electronics, telecommunications, power supplies, automotive, audio-visual equipment, industrial, and solar energy applications.
Working Principle of 1N4448HWS-13-F
The 1N4448HWS-13-F is a semiconductor device known as a rectifier diode. It is made up of a P-type and an N-type silicon substrate. This type of diode conducts current when a forward voltage is applied. When the voltage is reversed, no current will be able to flow through it.
The diode has a p-n junction made up of negative charges (N-type) and positive charges (P-type). When the external current and voltage are applied, the negative charges move away from the p-n junction, allowing the current to pass through. This movement of electrons produces a voltage drop across the diode, which is known as the forward voltage drop.
When the voltage is reversed, the positive charges (holes) will be attracted to the p-n junction, creating a depletion zone that does not allow current to flow. This reverse current is known as the reverse leakage current.
Conclusion
The 1N4448HWS-13-F is a single rectifier diode that is commonly used in high-temperature environments to provide an efficient and reliable solution. It has excellent thermal performance, a high power rating of 1.0A, and a high reverse voltage of 250V. It is used in many applications such as reversing polarity protection, voltage regulator, AC/DC power switch, temperature sensing, and half-wave rectification.
This diode conducts current when a forward voltage is applied and is able to block the current when the voltage is reversed due to the p-n junction and the negative and positive charges. It has a low forward voltage drop of 0.3V and a low reverse current leakage of 0.8mA.
The specific data is subject to PDF, and the above content is for reference
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