1N4448W-HE3-18 Allicdata Electronics
Allicdata Part #:

1N4448W-HE3-18-ND

Manufacturer Part#:

1N4448W-HE3-18

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 75V 150MA SOD123
More Detail: Diode Standard 75V 150mA Surface Mount SOD-123
DataSheet: 1N4448W-HE3-18 datasheet1N4448W-HE3-18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02249
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 720mV @ 5mA
Speed: Small Signal =
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes play an essential role in many electronic devices. Without their ability to restrict the flow of current, these devices would not perform as expected. This is why the 1N4448W-HE3-18 is so important - it is a single rectifier diode with a range of applications and a relatively simple working principle.

The 1N4448W-HE3-18 diode is ideal for a variety of applications, such as rectifier circuits, pre-regulator circuits, voltage-doublers, diode-protection circuits, and more. It has a forward voltage drop of only 0.7 volts, which is lower than many other single-diode diodes. This makes it ideal for applications where power loss is a concern. Furthermore, the diode is rated for up to 1.5A of forward current, making it suitable for most electronic systems.

The diode works by allowing current to flow in one direction only. It does this by using a junction between p-type and n-type semiconductors. When a voltage is applied to the cathode, electrons flow from the n-type material into the p-type material. When a voltage is applied to the anode, no current will flow. This is because the hole in the n-type material is blocked by the electron from the p-type material. This ensures that current flows in the correct direction.

1N4448W-HE3-18 diodes are also designed to be highly resistant to temperature fluctuations and other environmental influences. The device has a maximum operating temperature range of 0 - 70 °C, and a storage temperature range of -55 - 150 °C. This makes it suitable for use in a wide variety of applications. Furthermore, the device has a reverse avalanche energy-handling capability of up to 50 mJ, making it suitable for high-temperature or high-energy applications.

In summary, the 1N4448W-HE3-18 is a single rectifier diode with a wide range of applications and a relatively simple working principle. It has a low forward voltage drop, making it suitable for applications where power loss is a concern. It is also highly resistant to temperature and other environmental influences, and has a reverse avalanche energy-handling capability of up to 50 mJ. As such, it is ideal for use in a variety of applications where precision, reliability, and efficiency are key.

The specific data is subject to PDF, and the above content is for reference

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