Allicdata Part #: | 1N4448WS-G3-18-ND |
Manufacturer Part#: |
1N4448WS-G3-18 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 75V 150MA SOD323 |
More Detail: | Diode Standard 75V 150mA Surface Mount SOD-323 |
DataSheet: | 1N4448WS-G3-18 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02553 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 75V |
Current - Average Rectified (Io): | 150mA |
Voltage - Forward (Vf) (Max) @ If: | 720mV @ 5mA |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 5µA @ 75V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The 1N4448WS-G3-18 is a fast, common, silicon-based, low power, small signal, switching diode. A diode is a device with two terminals, an anode and a cathode, that is used to convert alternating current (AC) to direct current (DC) and regulate current flow. It belongs to a category of single rectifiers, which are diodes that allow current to flow in one direction only, blocking current in the opposite direction.
The 1N4448WS-G3-18 has a maximum reverse voltage of 100V, and a forward current of 1A. It can operate in temperatures ranging from -55°C to +150°C and is available in a DO-35 glass encapsulation. Its reverse recovery time is 65ns, and its capacitance is 0.01pF.
The 1N4448WS-G3-18 is used in a variety of fields, such as radio and television receivers, power circuits, and power supplies. Its applications include noise suppression, switching, protection, clipping, peak detection, voltage rectification, and signal clamping. Its fast recovery time makes it well-suited for applications where accuracy, speed, and reliability are necessary, such as communication systems and motor control circuits.
The 1N4448WS-G3-18 works by allowing free and easy current when connected directly to a power source. The power source provides the electric field to move charge and current forward. When the electric field is reversed (this can happen when the voltage across the diode exceeds the maximum reverse voltage), the current is blocked, and charge is inhibited from moving.
The 1N4448WS-G3-18 is extremely durable, making it an ideal choice for applications where durability is a requirement. Its low power consumption and small footprint make it an ideal choice for power circuits and power supplies that have limited space. Furthermore, its low cost and wide availability make it an inexpensive and accessible option for many applications.
In summary, the 1N4448WS-G3-18 is a fast, common, silicon-based, low power, small signal, switching diode. It has a maximum reverse voltage of 100V, and a forward current of 1A. It is used in a variety of fields, including radio and television receivers, power circuits, and power supplies. Its applications include noise suppression, switching, protection, clipping, peak detection, voltage rectification, and signal clamping. It is an ideal choice for applications where accuracy, speed, and reliability are necessary, as well as power circuits and power supplies with limited space.
The specific data is subject to PDF, and the above content is for reference
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