Allicdata Part #: | 1N4935DITR-ND |
Manufacturer Part#: |
1N4935-T |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 200V 1A DO41 |
More Detail: | Diode Standard 200V 1A Through Hole DO-41 |
DataSheet: | 1N4935-T Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.03188 |
10000 +: | $ 0.02710 |
25000 +: | $ 0.02550 |
50000 +: | $ 0.02391 |
125000 +: | $ 0.02072 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 200ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | 1N4935 |
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The 1N4935-T is a fast-recovery, avalanche-rated diode designed for use as a rectifier in a wide range of applications, from consumer electronics to military equipment. It has a wide operating temperature range, low forward voltage drop, and high surge current rating. This diode is an ideal choice for power rectification, voltage clamping, and signal level applications. Because of its fast-recovery, avalanche-rated properties, it is well suited for high-frequency switching circuits.
The 1N4935-T is a single-phase, silicon-based semiconductor device, which means it can exist as both an anode (positive) or as a cathode (negative), depending on the direction of the electrical current. It consists of two alternating layers of lightly doped N-type and P-type semiconductor materials, which act as a positive and a negative layer, respectively. A single PN-junction is formed between these two layers, and a reverse-biased (no current) material is placed between them to create a voltage barrier.
A diode\'s working principle is fairly simple. An applied voltage greater than the diode\'s reverse-biased voltage creates an electrical field that bridges the voltage barrier and allows the current to flow through the diode in one direction. This is known as forward bias. Similarly, when the applied voltage is less than the diode\'s reverse-biased voltage, the electrical field is blocked and no current flows through the diode, which is known as reverse bias.
The 1N4935-T is particularly effective in rectification applications, due to its high breakdown voltage and low forward voltage drop. The device is typically used in circuits to convert alternating current (AC) to direct current (DC), by only allowing the current to flow in one direction, thereby eliminating excess noise and distortion. The 1N4935-T is also used in many signal level applications, such as voltage clamps and temperature compensating circuits, where its fast recovery time, avalanche rating, and low forward drop lead to reliable power supply performance.
The 1N4935-T is a very valuable diode for a wide variety of applications. Its fast recovery, low forward voltage drop, and avalanche-rated properties make it a great choice for rectification, signal level, and high-frequency switching applications. With a reliable and efficient power supply performance, the 1N4935-T is a great way to go for any circuit requiring a single-phase rectifier.
The specific data is subject to PDF, and the above content is for reference
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1N4933RLG | ON Semicondu... | 0.03 $ | 10000 | DIODE GEN PURP 50V 1A DO4... |
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1N4936 TR | Central Semi... | 0.08 $ | 5000 | DIODE GEN PURP 400V 1A DO... |
1N4935-E3/54 | Vishay Semic... | -- | 11000 | DIODE GEN PURP 200V 1A DO... |
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1N4937GP-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4937-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4936RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4937-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
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