1N4935-T Allicdata Electronics
Allicdata Part #:

1N4935DITR-ND

Manufacturer Part#:

1N4935-T

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE GEN PURP 200V 1A DO41
More Detail: Diode Standard 200V 1A Through Hole DO-41
DataSheet: 1N4935-T datasheet1N4935-T Datasheet/PDF
Quantity: 1000
5000 +: $ 0.03188
10000 +: $ 0.02710
25000 +: $ 0.02550
50000 +: $ 0.02391
125000 +: $ 0.02072
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: 1N4935
Description

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The 1N4935-T is a fast-recovery, avalanche-rated diode designed for use as a rectifier in a wide range of applications, from consumer electronics to military equipment. It has a wide operating temperature range, low forward voltage drop, and high surge current rating. This diode is an ideal choice for power rectification, voltage clamping, and signal level applications. Because of its fast-recovery, avalanche-rated properties, it is well suited for high-frequency switching circuits.

The 1N4935-T is a single-phase, silicon-based semiconductor device, which means it can exist as both an anode (positive) or as a cathode (negative), depending on the direction of the electrical current. It consists of two alternating layers of lightly doped N-type and P-type semiconductor materials, which act as a positive and a negative layer, respectively. A single PN-junction is formed between these two layers, and a reverse-biased (no current) material is placed between them to create a voltage barrier.

A diode\'s working principle is fairly simple. An applied voltage greater than the diode\'s reverse-biased voltage creates an electrical field that bridges the voltage barrier and allows the current to flow through the diode in one direction. This is known as forward bias. Similarly, when the applied voltage is less than the diode\'s reverse-biased voltage, the electrical field is blocked and no current flows through the diode, which is known as reverse bias.

The 1N4935-T is particularly effective in rectification applications, due to its high breakdown voltage and low forward voltage drop. The device is typically used in circuits to convert alternating current (AC) to direct current (DC), by only allowing the current to flow in one direction, thereby eliminating excess noise and distortion. The 1N4935-T is also used in many signal level applications, such as voltage clamps and temperature compensating circuits, where its fast recovery time, avalanche rating, and low forward drop lead to reliable power supply performance.

The 1N4935-T is a very valuable diode for a wide variety of applications. Its fast recovery, low forward voltage drop, and avalanche-rated properties make it a great choice for rectification, signal level, and high-frequency switching applications. With a reliable and efficient power supply performance, the 1N4935-T is a great way to go for any circuit requiring a single-phase rectifier.

The specific data is subject to PDF, and the above content is for reference

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