Allicdata Part #: | 1N4935GPHE3/54-ND |
Manufacturer Part#: |
1N4935GPHE3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 1A DO204AL |
More Detail: | Diode Standard 200V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | 1N4935GPHE3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 200ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N4935 |
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1N4935GPHE3/54 diodes are classified under diodes, rectifiers and singles. They are a family of external surge absorber diodes. This type of diode has features designed to provide solutions for a specific application.
Most diodes, such as the 1N4935GPHE3/54, are designed to carry a current in one direction only. A circuit using one of these diodes allows electric current to flow in one direction. When a diode is reversed-biased, it operates in a different way, serving a different purpose and providing a different result. A reverse-biased diode absorbs the energy of an incoming surge or high-voltage spike, dissipating the energy and providing protection.
The 1N4935GPHE3/54 is a reverse-biased, small signal, silicon-based diode, specifically designed for the protection of data and telecommunications equipment. This diode has an array of unique characteristics, including:
- Extended inverse voltage
- High surge durability
- Low capacitance
- Fast response
- Low leakage current
In addition, 1N4935GPHE3/54 diodes are designed to provide excellent protection of circuits from overcurrent, overvoltage and transient events, such as lightning strikes, conducted and radiated electromagnetic interference (EMI) and electrostatic discharge (ESD). This type of diode is well suited to telecommunications applications where fault protection, low series resistance and low shunt capacitance are essential.
The 1N4935GPHE3/54 diode working principle is based on the traditional diode physics principle. When a conventional diode is forward biased, it will conduct electricity. But when a diode is reverse biased, the diode will resist the flow of electricity. So, in the case of the 1N4935GPHE3/54, the diode’s reverse bias voltage helps to absorb any high-voltage transient events, thus protecting the circuits from damage.
The 1N4935GPHE3/54’s application field are in consumer electronics, automotive, industrial control, power systems, networking/communications and consumer electronics. This diode is usually used for protection in power supplies, telecommunications, data and other electronic systems. Generally, it offers more protection than a conventional diode due to its unique design characteristics and surge current handling capability.
In conclusion, 1N4935GPHE3/54 diodes are classified as diodes, rectifiers and singles and are designed with specific features that make them ideal for the protection of data and telecommunication equipment from damaging transient events. The diode works on the principle of reverse bias, absorbing any incoming high-voltage surges and dissipating the energy, thus providing protection for the circuits used with it. In addition, its application field is broad, ranging from consumer electronics to automotive and industrial control.
The specific data is subject to PDF, and the above content is for reference
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