1N4937GPHE3/73 Allicdata Electronics
Allicdata Part #:

1N4937GPHE3/73-ND

Manufacturer Part#:

1N4937GPHE3/73

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 600V 1A DO204AL
More Detail: Diode Standard 600V 1A Through Hole DO-204AL (DO-4...
DataSheet: 1N4937GPHE3/73 datasheet1N4937GPHE3/73 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SUPERECTIFIER®
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N4937
Description

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The 1N4937GPHE3/73 diode is a single rectifier that is a versatile and dependable building block for various power electronics systems. It is commonly used in a wide range of applications such as stabilizing power supplies, converters, and inverters.

This device comes in a DO-15 package that is 3.2mm in height and utilizes robust design that gives optimum performance in high temperature and high-current environments. The 1N4937GPHE3/73 is capable of handling high current surges with a maximum average forward rectification current of 1.5A.

It performs in a variety of tasks such as peak power switching, voltage clamping, and transient voltage protection. Other features include an operating temperature range of -65C to +125C and a junction temperature range of -65C to +150C. The 1N4937GPHE3/73 can also mute EMI/RFI noise as well as reverse surge protection up to 30A with an IFSM rating of 600A.

The 1N4937GPHE3/73 diode is made of silicon and has a high maximum reverse current leakage rating of 0.2mA at 25C. The forward voltage drop is 1.05V at 0.1A and the reverse recovery time is only 35nS. Furthermore, it has a limited power dissipation of 400mW.

The working principle of the 1N4937GPHE3/73 diode is simple. The diode is built to allow current to flow in one direction and block it in the other. When forward connected, an electric current will easily flow through the diode. When reverse connected, the PN junction acts to block the flow of current. When the voltage drops below the forward voltage rating of the diode, the diode is reverse biased, meaning that the current will not flow through it.

In conclusion, the 1N4937GPHE3/73 single rectifier diode can be used in a wide range of applications and plays a critical role in maintaining the stability of power supplies, converters, and inverters. It is capable of handling large current surges and has an exceptionally low reverse leakage rating and reverse recovery time. It is a dependable building block for various power electronics systems and is sure to meet your needs.

The specific data is subject to PDF, and the above content is for reference

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