Allicdata Part #: | 1N4937GPHE3/73-ND |
Manufacturer Part#: |
1N4937GPHE3/73 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 1A DO204AL |
More Detail: | Diode Standard 600V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | 1N4937GPHE3/73 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 200ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N4937 |
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The 1N4937GPHE3/73 diode is a single rectifier that is a versatile and dependable building block for various power electronics systems. It is commonly used in a wide range of applications such as stabilizing power supplies, converters, and inverters.
This device comes in a DO-15 package that is 3.2mm in height and utilizes robust design that gives optimum performance in high temperature and high-current environments. The 1N4937GPHE3/73 is capable of handling high current surges with a maximum average forward rectification current of 1.5A.
It performs in a variety of tasks such as peak power switching, voltage clamping, and transient voltage protection. Other features include an operating temperature range of -65C to +125C and a junction temperature range of -65C to +150C. The 1N4937GPHE3/73 can also mute EMI/RFI noise as well as reverse surge protection up to 30A with an IFSM rating of 600A.
The 1N4937GPHE3/73 diode is made of silicon and has a high maximum reverse current leakage rating of 0.2mA at 25C. The forward voltage drop is 1.05V at 0.1A and the reverse recovery time is only 35nS. Furthermore, it has a limited power dissipation of 400mW.
The working principle of the 1N4937GPHE3/73 diode is simple. The diode is built to allow current to flow in one direction and block it in the other. When forward connected, an electric current will easily flow through the diode. When reverse connected, the PN junction acts to block the flow of current. When the voltage drops below the forward voltage rating of the diode, the diode is reverse biased, meaning that the current will not flow through it.
In conclusion, the 1N4937GPHE3/73 single rectifier diode can be used in a wide range of applications and plays a critical role in maintaining the stability of power supplies, converters, and inverters. It is capable of handling large current surges and has an exceptionally low reverse leakage rating and reverse recovery time. It is a dependable building block for various power electronics systems and is sure to meet your needs.
The specific data is subject to PDF, and the above content is for reference
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1N4933RLG | ON Semicondu... | 0.03 $ | 10000 | DIODE GEN PURP 50V 1A DO4... |
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1N4967US | Microsemi Co... | 9.42 $ | 4 | DIODE ZENER 24V 5W D5BZen... |
1N4936 TR | Central Semi... | 0.08 $ | 5000 | DIODE GEN PURP 400V 1A DO... |
1N4935-E3/54 | Vishay Semic... | -- | 11000 | DIODE GEN PURP 200V 1A DO... |
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1N4937GP-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4937-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4936RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4937-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4935-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
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