| Allicdata Part #: | 1N4946S-ND |
| Manufacturer Part#: |
1N4946 |
| Price: | $ 4.85 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Semtech Corporation |
| Short Description: | DIODE ZENER AXIAL |
| More Detail: | Zener Diode Through Hole Axial |
| DataSheet: |  1N4946 Datasheet/PDF |
| Quantity: | 1000 |
| 250 +: | $ 4.36325 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Current - Reverse Leakage @ Vr: | 500nA @ 600V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
| Mounting Type: | Through Hole |
| Package / Case: | Axial |
| Supplier Device Package: | Axial |
Description
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Diodes play an important role in the modern world of electronics as they are utilized in devices used in everyday life. One type of diode, known as a Zener diode, is used in various applications to protect from reverse voltage, regulate voltage, and protect from overvoltage conditions. One popular Zener diode is the 1N4946, which has a low breakdown voltage, a low dynamic impedance, and is an indicative single-diode package. The 1N4946 diode has a wide range of applications and is utilized in numerous electronic systems.The 1N4946 diode is typically used for reverse breakdown protection, due to its low breakdown voltage and low dynamic impedance, which makes it effective in preventing overvoltage conditions. In cases where excessive voltage is generated, the 1N4946 breaks down and redirects the excess current away from the circuit, thus preventing damage. Additionally, the 1N4946 can be used to stabilize voltage during peak current conditions. By utilizing its low dynamic impedance, the diode is able to reduce the peak current and prevent deviations in the operating voltage.In addition to reverse breakdown protection and voltage stabilization, the 1N4946 can also be used as a temperature indicator. As the chip\'s temperature rises during operation, its breakdown voltage decreases. This can be used to detect any possible temperature issues before they cause serious damage to the device.The underlying principle behind the 1N4946 diode\'s operations is based on the behavior of a semiconductor\'s p-n junction when exposed to an electric field. When a voltage is applied to the diode, it affects the electron momentum of selected carriers and creates a potential barrier. As the applied voltage continues, a point is reached where this barrier becomes weakened and electrons are able to move from the n-type to the p-type material, thus forming a reverse current. The potential is then determined by the current and voltage, forming a breakdown region where the diode can regulate voltage and protect against overvoltage conditions.Overall, the 1N4946 diode is an effective tool for many applications and is widely used in the electronics industry. Its low breakdown voltage and low dynamic impedance make it well-suited for reverse breakdown protection, voltage stabilization, and temperature monitoring. Its operations are based on the reverse breakdown and current-voltage relationship during p-n junction behavior, allowing it to safely adjust the voltage and protect from overvoltage conditions.
The specific data is subject to PDF, and the above content is for reference
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| 1N4942-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GPP FAST 1A DO-41Di... |
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