1N4947GP-E3/53

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The 1N4947GP-E3/53 belongs to the Single Rectifier Diodes family. The device is characterized by high-speed switching and low-forward voltage drop. It supports Zener breakdown modes and is suitable for both switching and rectifier applications.

1N4947GP-E3/53 Overview

The 1N4947GP-E3/53 is a single Fast Recovery Diode. It has a maximum reverse recovery time of 5 nanoseconds, and a maximum offer voltage of 600V. The device incorporates a built-in avalanche voltage in order to provide overvoltage protection. In addition, it features low forward voltage drop, which ensure that the device is highly efficient. The diode also has a high yield strength and low failure rate, thereby making it reliable and durable.

1N4947GP-E3/53 Application Field

The 1N4947GP-E3/53 is well suited for the following applications:

• AC-DC power conversion.
• Switching power supply.
• Uninterruptible power supply (UPS).
• Phase control.
• Rectification.
• Motor Control.
• Lighting Control.

1N4947GP-E3/53 Working Principle

The 1N4947GP-E3/53 is of the Fast Recovery Diode type. Its working principle is based on the P-N junction principle. This device utilizes a reverse-biased P-N junction to control the flow of current. The diode is biased in reverse so that current will only flow in the reverse direction, and not in the forward direction. The amount of current is also controlled by the voltage across the junction. As the applied voltage increases, the amount of current increases. When the applied voltage is below a certain threshold, the current will stay constant and the device will be in a cut-off state.

The 1N4947GP-E3/53 also utilizes the Zener breakdown principle. In this principle, the P-N junction is all around the diode to breakdown when the applied voltage exceeds a certain limit. When the voltage reaches the breakdown voltage, the current flows in the reverse direction and the diode is in the breakdown state. This operation will cause the diode to emit light and dissipate heat, which makes it ideal for high-power and high-frequency applications.

In addition, the device is also capable of providing overvoltage protection. The avalanche voltage is used to trigger the breakdown voltage of the P-N junction and the device will enter the breakdown state. This will prevent any overvoltage or surge current from damaging the device.

The 1N4947GP-E3/53 is well-suited for a wide range of applications. It is highly efficient, reliable, and durable. It is also capable of providing overvoltage protection and can be used in both AC-DC and DC-DC power conversion applications.

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