1N4948GPHE3/73

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Introduction to the 1N4948GPHE3/73

The 1N4948GPHE3/73 is a single rectifier diode manufactured by NXP Semiconductors. It is ideal for applications requiring high current rectification, such as boost converters and other power supply designs. The 1N4948GPHE3/73 is a high voltage, fast recovery silicon rectifier diode that has a rated current of 1A. With an operating temperature range of -55°C to +150°C, the diode is designed for high temperature operation. Its multiline plastic package (SOT-323) reduces the size required for assembly, allowing for simplified production.

Application Field and Working Principle

The 1N4948GPHE3/73 is designed for rectification of AC signals in a variety of applications. It can be used in power supply designs such as boost converters or for any other application that requires high current rectification. It\'s high current rating (1A) makes it suitable for high efficiency designs.

Figure 1 shows the basic structure of a 1N4948GPHE3/73 diode. The diode is composed of two parts; an anode (A) and a cathode (K). It is suitable for use in either direction. The anode is the positive terminal, and the cathode is the negative terminal. When a positive voltage is applied to the anode, current will flow from the anode to the cathode; this is known as forward conduction. When the voltage is reversed, the flow of current will be blocked; this is known as reverse blocking.

When a voltage is applied to the 1N4948GPHE3/73 diode, the anode will become positive and the cathode will become negative. This creates an inherent electric field within the diode, known as a depletion region. The depletion region is a region of depleted (absent) electrons and holes that extends from the anode to the cathode. This region acts as a barrier to current flow and acts as an off switch when the applied voltage is reverse biased. This is known as the diode’s reverse blocking ability.

The 1N4948GPHE3/73 diode’s forward conduction is controlled by a variety of characteristics. The forward voltage drop is the voltage required for conduction to begin, and is usually in the range of 0.7V to 1.0V. The forward current is the current that can flow through the diode in the forward direction, and is usually limited to 1A. The reverse current is the current that can flow through the diode in the reverse direction, and is usually limited to a few microamps (uA).

The 1N4948GPHE3/73 diode also has a reverse recovery time. Reverse recovery time is the time taken for the diode to switch from the forward conduction state to the reverse blocking state. In applications where the diode is used to reduce the peak current in a circuit, the reverse recovery time should be as low as possible. The 1N4948GPHE3/73 has a reverse recovery time of 5ns, making it suitable for use in high frequency applications.

Conclusion

The 1N4948GPHE3/73 is a single rectifier diode manufactured by NXP Semiconductors. It is ideal for applications requiring high current rectification such as boost converters and other power supply designs. It has an operating temperature range of -55°C to +150°C, and a rated current of 1A. The diode has a forward voltage drop of 0.7V to 1.0V, a maximum forward current of 1A, and a maximum reverse current of a few uA. It has a reverse recovery time of 5ns, making it suitable for use in high frequency applications.

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