| Allicdata Part #: | 1N5400GHA0G-ND |
| Manufacturer Part#: |
1N5400GHA0G |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE GEN PURP 50V 3A DO201AD |
| More Detail: | Diode Standard 50V 3A Through Hole DO-201AD |
| DataSheet: | 1N5400GHA0G Datasheet/PDF |
| Quantity: | 1000 |
| 14000 +: | $ 0.04922 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Box (TB) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 50V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 3A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 5µA @ 50V |
| Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | DO-201AD, Axial |
| Supplier Device Package: | DO-201AD |
| Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes, more specifically single rectifiers, are electronic components that allow current to flow in one direction only, blocking current in the opposite direction. One specific type of single rectifier diode is the 1N5400GHA0G, which is commonly used in higher power capabilities. The 1N5400GHA0G can operate with currents of up to 3 amperes and a reverse voltage of up to 1,000 volts. It is also offers figures of merit such as junction capacitance, capacitance ratio between its high and low current (CW/CC) values, and switching speed.
Application Areas
Because of its high current capabilities, the 1N5400GHA0G is commonly used in high power industrial applications, including energy infrastructure, industrial controls, medical devices and telecommunications. The diode is also used as freewheeling diodes in power systems, bridge rectifiers in DC-DC converters, arc suppression and contactors in motor drives and UPS, and like most single rectifiers, it is used in switch mode power supplies.
The 1N5400GHA0G is also used in high power applications in the automotive industry such as switch mode power, battery charging and alternator rectification. It is also used in power inverters in the range of 0.5 kilowatts to 6.5 kilowatts for consumer and industrial applications.
Working Principle
Like all single rectifiers, the 1N5400GHA0G uses a single PN junction to block current from flowing in the opposite direction. The PN junction is formed by the combination of two diverse materials, typically p-type and n-type semiconductors. The p-type material contains an excess of positive holes usually generated due to electron donors, whereas the n-type material has an excess of electrons created by electron acceptors. When the n-type and p-type materials are brought together they form a bond mechanism that prevents current from flowing in the opposite direction, which is known as the diode effect.
The diode effect works in both directions, making it possible to block current either way by simply changing the applied voltage. This behavior enables the diode to be used as an efficient switch for controlling electric currents. The 1N5400GHA0G diode itself is made up of two electrodes, a cathode and an anode, with the anode being the positive pole, the cathode the negative pole and the PN junction being the junction between the two poles.
Other Characteristics
The 1N5400GHA0G also offers impressive switching speed between high and low current conditions. This enables the diode to switch between the two in a very short period of time, ensuring that no power is lost during the transition. Additionally, the 1N5400GHA0G also has a low capacitance ratio between the high and low current conditions. This is important because it helps to minimize voltage spikes and miniaturization.
Despite its low capacitance ratio, the diode still offers a large junction capacitance, which maximizes noise reduction and enables higher switching frequencies. It also provides reverse recovery time that is accelerated compared to other diodes. This is important for protection circuits utilizing high speed switching applications, as the 1N5400GHA0G is able to limit the lack of current due to self-induction resulting from high voltage reduction.
Conclusion
In conclusion, the 1N5400GHA0G is a single rectifier diode with a high current capability, making it suitable for a multitude of high power applications. It is well-suited for energy infrastructure, automotive and industrial applications, as well as motor drives, power systems and switch mode power supplies. Thanks to its impressive figure of merit that offers both high capacitance and low capacitance ratios, the 1N5400GHA0G is able to perform well under most operating conditions, making it a valuable component for many power systems.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N5420US | Microsemi Co... | 8.63 $ | 1000 | DIODE GEN PURP 600V 3A D5... |
| 1N5408-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5400-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5406TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5404GP-E3/54 | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| 1N5408GP-E3/54 | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5406T-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5406RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5401G-T | Diodes Incor... | 0.08 $ | 1200 | DIODE GEN PURP 100V 3A AX... |
| 1N5404GP-TP | Micro Commer... | 0.11 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| 1N5408-B | Diodes Incor... | 0.29 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5404-E3/73 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| 1N5405 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 500V 3A DO... |
| 1N5401-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 3A DO... |
| 1N5402-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| 1N5401-E3/54 | Vishay Semic... | -- | 2800 | DIODE GEN PURP 100V 3A DO... |
| 1N5400 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5415US | Microsemi Co... | 6.31 $ | 1000 | DIODE GEN PURP 50V 3A D5B... |
| 1N5406-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5401 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 3A DO... |
| 1N5418-TAP | Vishay Semic... | 0.25 $ | 1000 | DIODE AVALANCHE 400V 3A S... |
| 1N5408TA | SMC Diode So... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5408GP-TP | Micro Commer... | 0.12 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5400GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5407-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5401G R0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
| 1N5407G B0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5417-TAP | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 3A S... |
| 1N5406G | ON Semicondu... | 0.27 $ | 3923 | DIODE GEN PURP 600V 3A DO... |
| 1N5401G | ON Semicondu... | 0.27 $ | 3178 | DIODE GEN PURP 100V 3A AX... |
| 1N5408-E3/54 | Vishay Semic... | -- | 22400 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5418 | Microsemi Co... | -- | 230 | DIODE GEN PURP 400V 3A B-... |
| 1N5407TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5407G | ON Semicondu... | 0.27 $ | 6900 | DIODE GEN PURP 800V 3A AX... |
| 1N5401-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
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1N5400GHA0G Datasheet/PDF