1N5415US Allicdata Electronics
Allicdata Part #:

1N5415US-ND

Manufacturer Part#:

1N5415US

Price: $ 6.31
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 50V 3A D5B
More Detail: Diode Standard 50V 3A Surface Mount D-5B
DataSheet: 1N5415US datasheet1N5415US Datasheet/PDF
Quantity: 1000
100 +: $ 5.67901
Stock 1000Can Ship Immediately
$ 6.31
Specifications
Series: --
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: E-MELF
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Description

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Diodes - Rectifiers - Single

The 1N5415US is a single rectifier diode. Its main application field includes rectification, blocking and freewheeling applications. It is a single device in a Surface Mount package. It has a forward voltage drop of 1.4 V and an operating temperature range of -20°C to 85°C. This device is intended for use in high-frequency rectification applications.

Physical Dimensions

The 1N5415US has a DO-214AC package outline. Its maximum length is 3.00 mm, its maximum width is 1.50 mm, and its maximum height is 1.15 mm. It is designed to have a maximum weight of 0.260 g. It has an active area that is 0.30 mm long and 0.18 mm wide.

Maximum Ratings

The 1N5415US has a maximum repetitive peak reverse voltage of 100 V. Its maximum forward voltage drop is 1.4 V and its maximum forward continuous current is 3.2 A. It has a maximum operating junction temperature range of 175°C and a maximum storage temperature range of -55°C to 175°C. It has a maximum thermal resistance of 250°C/W.

Electrical Characteristics

The 1N5415US has a reverse recovery time of 25 ns, a breakdown voltage of 6.0 V typical, and a forward surge current of 30 A. Its junction capacitance is 30 pF, its reverse current leakage is 3 µA typical, and its forward voltage drop is 1.3 V typical.

Working Principle

The 1N5415US is a single rectifier diode. It is designed to rectify alternating current (AC) into direct current (DC). The device works by allowing current to flow in one direction, while blocking current in the opposite direction. This directionality is achieved by a phenomenon called the “diode effect”, which is the tendency of oppositely charged carriers to flow in different directions in a semiconductor material.

In a single rectifier diode such as the 1N5415US, the opposite directions of current flow are defined by the anode and cathode terminals. The anode is the positive terminal, and the cathode is the negative terminal. When the anode voltage is positive, current will flow from anode to cathode. In this forward-biased state, the device drops a small voltage of about 1.4 V due to the diode effect.

The 1N5415US can also be used in blocking and freewheeling applications. In a blocking application, the diode is used to block current from flowing in reverse. In a freewheeling application, the diode is used to provide current path while allowing the current source to disconnect, aiding in the reduction of generated heat.

The specific data is subject to PDF, and the above content is for reference

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