Allicdata Part #: | 1N5415US-ND |
Manufacturer Part#: |
1N5415US |
Price: | $ 6.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 50V 3A D5B |
More Detail: | Diode Standard 50V 3A Surface Mount D-5B |
DataSheet: | 1N5415US Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 5.67901 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 9A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 1µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | E-MELF |
Supplier Device Package: | D-5B |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes - Rectifiers - Single
The 1N5415US is a single rectifier diode. Its main application field includes rectification, blocking and freewheeling applications. It is a single device in a Surface Mount package. It has a forward voltage drop of 1.4 V and an operating temperature range of -20°C to 85°C. This device is intended for use in high-frequency rectification applications.
Physical Dimensions
The 1N5415US has a DO-214AC package outline. Its maximum length is 3.00 mm, its maximum width is 1.50 mm, and its maximum height is 1.15 mm. It is designed to have a maximum weight of 0.260 g. It has an active area that is 0.30 mm long and 0.18 mm wide.
Maximum Ratings
The 1N5415US has a maximum repetitive peak reverse voltage of 100 V. Its maximum forward voltage drop is 1.4 V and its maximum forward continuous current is 3.2 A. It has a maximum operating junction temperature range of 175°C and a maximum storage temperature range of -55°C to 175°C. It has a maximum thermal resistance of 250°C/W.
Electrical Characteristics
The 1N5415US has a reverse recovery time of 25 ns, a breakdown voltage of 6.0 V typical, and a forward surge current of 30 A. Its junction capacitance is 30 pF, its reverse current leakage is 3 µA typical, and its forward voltage drop is 1.3 V typical.
Working Principle
The 1N5415US is a single rectifier diode. It is designed to rectify alternating current (AC) into direct current (DC). The device works by allowing current to flow in one direction, while blocking current in the opposite direction. This directionality is achieved by a phenomenon called the “diode effect”, which is the tendency of oppositely charged carriers to flow in different directions in a semiconductor material.
In a single rectifier diode such as the 1N5415US, the opposite directions of current flow are defined by the anode and cathode terminals. The anode is the positive terminal, and the cathode is the negative terminal. When the anode voltage is positive, current will flow from anode to cathode. In this forward-biased state, the device drops a small voltage of about 1.4 V due to the diode effect.
The 1N5415US can also be used in blocking and freewheeling applications. In a blocking application, the diode is used to block current from flowing in reverse. In a freewheeling application, the diode is used to provide current path while allowing the current source to disconnect, aiding in the reduction of generated heat.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5401RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 100V 3A AX... |
1N5400RLG | ON Semicondu... | -- | 2400 | DIODE GEN PURP 50V 3A DO2... |
1N5402RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 200V 3A DO... |
1N5406RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5406-T | Diodes Incor... | 0.08 $ | 20400 | DIODE GEN PURP 600V 3A DO... |
1N5402-T | Diodes Incor... | -- | 16800 | DIODE GEN PURP 200V 3A DO... |
1N5404-T | Diodes Incor... | -- | 13200 | DIODE GEN PURP 400V 3A DO... |
1N5401-T | Diodes Incor... | 0.08 $ | 6000 | DIODE GEN PURP 100V 3A DO... |
1N5404-E3/54 | Vishay Semic... | -- | 15400 | DIODE GEN PURP 400V 3A DO... |
1N5408-E3/54 | Vishay Semic... | -- | 22400 | DIODE GEN PURP 1KV 3A DO2... |
1N5401-E3/54 | Vishay Semic... | -- | 2800 | DIODE GEN PURP 100V 3A DO... |
1N5403-E3/54 | Vishay Semic... | -- | 2800 | DIODE GEN PURP 300V 3A DO... |
1N5408G A0G | Taiwan Semic... | 0.11 $ | 5500 | DIODE GEN PURP 1KV 3A DO2... |
1N5416 | Microsemi Co... | -- | 328 | DIODE GEN PURP 100V 3A AX... |
1N5420 | Microsemi Co... | 6.22 $ | 257 | DIODE GEN PURP 600V 3A AX... |
1N5417 | Microsemi Co... | 6.22 $ | 78 | DIODE GEN PURP 200V 3A AX... |
1N5418 | Microsemi Co... | -- | 230 | DIODE GEN PURP 400V 3A B-... |
1N5401-G | Comchip Tech... | 0.05 $ | 8400 | DIODE GEN PURP 100V 3A DO... |
1N5408G | ON Semicondu... | -- | 22800 | DIODE GEN PURP 1KV 3A DO2... |
1N5400G | ON Semicondu... | -- | 3915 | DIODE GEN PURP 50V 3A DO2... |
1N5404G | ON Semicondu... | 0.27 $ | 4844 | DIODE GEN PURP 400V 3A DO... |
1N5406G | ON Semicondu... | 0.27 $ | 3923 | DIODE GEN PURP 600V 3A DO... |
1N5401G | ON Semicondu... | 0.27 $ | 3178 | DIODE GEN PURP 100V 3A AX... |
1N5407RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 800V 3A AX... |
1N5402-B | Diodes Incor... | 0.29 $ | 2644 | DIODE GEN PURP 200V 3A DO... |
1N5408-B | Diodes Incor... | 0.29 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5404-B | Diodes Incor... | 0.29 $ | 670 | DIODE GEN PURP 400V 3A DO... |
1N5406G A0G | Taiwan Semic... | 0.1 $ | 500 | DIODE GEN PURP 600V 3A DO... |
1N5407G A0G | Taiwan Semic... | 0.1 $ | 500 | DIODE GEN PURP 800V 3A DO... |
1N5400G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5401G-T | Diodes Incor... | 0.08 $ | 1200 | DIODE GEN PURP 100V 3A AX... |
1N5408G-T | Diodes Incor... | 0.08 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
1N5404-G | Comchip Tech... | 0.08 $ | 2400 | DIODE GEN PURP 400V 3A DO... |
1N5404G-T | Diodes Incor... | 0.08 $ | 10800 | DIODE GEN PURP 400V 3A DO... |
1N5408GP-TP | Micro Commer... | 0.12 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
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