| Allicdata Part #: | 1N5420US-ND |
| Manufacturer Part#: |
1N5420US |
| Price: | $ 8.63 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE GEN PURP 600V 3A D5B |
| More Detail: | Diode Standard 600V 3A Surface Mount D-5B |
| DataSheet: | 1N5420US Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 7.77070 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 9A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 400ns |
| Current - Reverse Leakage @ Vr: | 1µA @ 600V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | E-MELF |
| Supplier Device Package: | D-5B |
| Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes are important components in many types of electronic products. 1N5420US is a diode which belongs to the category of rectifiers, and specifically, it is a single diode. The purpose of 1N5420US is to convert alternating current (AC) to direct current (DC), making it very useful in many areas.
Application Field
The most common application of 1N5420US is to use it as a rectifier in power supply designs. It supports reverse and forward current control, so it can be used as a protection device or even as a switch in many applications. Its reverse voltage and forward voltage turn-on characteristics make it suitable for high-frequency switching applications. In addition, it is also widely used in electronic motor drives, adapters, and solar inverters.
Working Principle
The starting point of the working principle of a 1N5420US rectifier is that it is made of two components, namely an anode and a cathode. The anode is the positive side, and the cathode is the negative side. The flow of current through it reverses periodically, making it easier for a single diode to convert AC current to DC current. During the positive cycle of the AC current, the anode is more positive than the cathode and current flows from anode to the cathode. During the negative cycle, the cathode is more positive than the anode, and current does not flow. This forms a basic AC to DC conversion process.
The fourth layer is a thick buffer layer. The purpose of this layer is to improve the efficiency of the diode and to add a significant level of reliability to the device. The buffer layer also contributes towards reducing power losses during the switching process.
Conclusion
In conclusion, 1N5420US is one of the most commonly used rectifiers and it is widely used in many applications due to its low forward voltage drop and its reverse voltage and forward current control. Its working principle is based on the flow of current in both directions and the properties of the special buffer layer in the diode, making it an excellent choice for rectifier applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N5420US | Microsemi Co... | 8.63 $ | 1000 | DIODE GEN PURP 600V 3A D5... |
| 1N5408-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5400-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5406TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5404GP-E3/54 | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| 1N5408GP-E3/54 | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5406T-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5406RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5401G-T | Diodes Incor... | 0.08 $ | 1200 | DIODE GEN PURP 100V 3A AX... |
| 1N5404GP-TP | Micro Commer... | 0.11 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| 1N5408-B | Diodes Incor... | 0.29 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5404-E3/73 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| 1N5405 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 500V 3A DO... |
| 1N5401-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 3A DO... |
| 1N5402-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| 1N5401-E3/54 | Vishay Semic... | -- | 2800 | DIODE GEN PURP 100V 3A DO... |
| 1N5400 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5415US | Microsemi Co... | 6.31 $ | 1000 | DIODE GEN PURP 50V 3A D5B... |
| 1N5406-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5401 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 3A DO... |
| 1N5418-TAP | Vishay Semic... | 0.25 $ | 1000 | DIODE AVALANCHE 400V 3A S... |
| 1N5408TA | SMC Diode So... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5408GP-TP | Micro Commer... | 0.12 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5400GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5407-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5401G R0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
| 1N5407G B0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5417-TAP | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 3A S... |
| 1N5406G | ON Semicondu... | 0.27 $ | 3923 | DIODE GEN PURP 600V 3A DO... |
| 1N5401G | ON Semicondu... | 0.27 $ | 3178 | DIODE GEN PURP 100V 3A AX... |
| 1N5408-E3/54 | Vishay Semic... | -- | 22400 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5418 | Microsemi Co... | -- | 230 | DIODE GEN PURP 400V 3A B-... |
| 1N5407TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5407G | ON Semicondu... | 0.27 $ | 6900 | DIODE GEN PURP 800V 3A AX... |
| 1N5401-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
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1N5420US Datasheet/PDF