
Allicdata Part #: | 1N5407-TPTR-ND |
Manufacturer Part#: |
1N5407-TP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 800V 3A DO201AD |
More Detail: | Diode Standard 800V 3A Through Hole DO-201AD |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 800V |
Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | 1N5407 |
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1N5407-TP is a diode used in a variety of applications, and is more commonly known as a rectifier diode. Rectifier diodes are the most commonly used type of diode in the electronics industry and are used in a variety of applications that involve converting alternating current (AC) to direct current (DC).1N5407-TP is a single rectifier diode, meaning it has one P-N junction that allows current to flow in one direction. In this case, the P-N junction is made up of a P-type semiconductor and an N-type semiconductor. In a rectifier diode, this P-N junction is engineered to have a very low forward voltage drop and a high reverse breakdown voltage. This means that when current is applied in the correct direction, the diode allows current to flow and it has very little resistance. When current is applied in the reverse direction, the diode prevents current from flowing and the voltage across the diode breaks down.The 1N5407-TP has a forward voltage drop of 0.7V, which is relatively low compared to other rectifier diodes. This makes it more efficient when used in applications such as AC-to-DC power conversion, as it reduces the amount of power that is wasted in the form of heat. It also has a reverse breakdown voltage of 400V, which is high compared to other rectifier diodes, making it suitable for high voltage applications such as power conditioning or motor control.A common application for 1N5407-TP is rectifying AC-to-DC power conversion. In this application, a bridge rectifier circuit is used to convert the AC voltage to a DC voltage. The 1N5407-TP diodes are arranged in a bridge rectifier circuit and the AC voltage is applied across the circuit. The diodes allow the current to flow in one direction, and prevent it from flowing in the other direction. The output of the circuit is then a DC voltage, which can be used to power circuits that require a DC voltage.1N5407-TP diodes can also be used in circuits that require voltage regulation, such as the protection of sensitive electronic components. When used in a voltage regulator circuit, the 1N5407-TP diodes can be used to protect the circuit from overvoltage conditions. This is achieved by using the diodes as a series regulator, which limits the amount of current that can flow through the circuit when the voltage exceeds a certain level.In summary, 1N5407-TP is a rectifier diode that is used in a variety of applications such as AC-to-DC power conversion and voltage regulation. It is a single rectifier diode that has a forward voltage drop of 0.7V and a reverse breakdown voltage of 400V, which makes it suitable for high voltage applications. It is suitable for a variety of applications, such as rectifying AC power, protecting sensitive electronics from overvoltage conditions or as part of a voltage regulator circuit.
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1N5400GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5407-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5400 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5415US | Microsemi Co... | 6.31 $ | 1000 | DIODE GEN PURP 50V 3A D5B... |
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1N5401-B | Diodes Incor... | 0.12 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
1N5401-G | Comchip Tech... | 0.05 $ | 8400 | DIODE GEN PURP 100V 3A DO... |
1N5401G R0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
1N5417TR | Vishay Semic... | 0.25 $ | 1000 | DIODE AVALANCHE 200V 3A S... |
1N5402 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5400G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5408-E3/51 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5402-B | Diodes Incor... | 0.29 $ | 2644 | DIODE GEN PURP 200V 3A DO... |
1N5400G A0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5400TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5404GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5404GHB0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5408GHB0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 3A DO201AD... |
1N5407-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5406-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5402G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5404-T | Diodes Incor... | -- | 13200 | DIODE GEN PURP 400V 3A DO... |
1N5400-E3/51 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5408-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5406-T | Diodes Incor... | 0.08 $ | 20400 | DIODE GEN PURP 600V 3A DO... |
1N5406GP-E3/54 | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5419 | Microsemi Co... | 4.65 $ | 1000 | DIODE GEN PURP 500V 3A B-... |
1N5406-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5401G B0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
1N5405-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 500V 3A DO... |
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