Allicdata Part #: | 1N5402FSTR-ND |
Manufacturer Part#: |
1N5402 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 200V 3A DO201AD |
More Detail: | Diode Standard 200V 3A Through Hole DO-201AD |
DataSheet: | 1N5402 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | 1N5402 |
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Diodes - Rectifiers - Single
The 1N5402 diode is a basic diode rectifier that is commonly used in rectification, particularly in the construction of power supplies. It is a three-terminal device, often found in TO-220 or TO-251 packages.
Application Field
The 1N5402 diode is a general purpose diode, and it is widely used in different types of applications. High-reliability and low-power applications such as automobile computers, lightening control systems, telecom products and power-critical portable products employ the 1N5402 rectifier. It can also be used for power switching, given its high voltage and current ratings.
Working Principle
The 1N5402 is a basic diode rectifier. It is a three-terminal device that has two anode terminals and a single cathode terminal. The anode terminals are labelled ‘A’ and ‘A2’ and the cathode is labelled \'C\'. When forward biased (electric current is applied to the Anodes A and A2), the diode begins to conduct and current flows through it. When the voltage across the contacts is reversed, the 1N5402 stops conducting, or ‘blocks’ any current.
The traditional rectifier diode is made from a single p-n junction diode, and this is the case with the 1N5402. The p-n junction is made from silicon crystals and the diode is filled with the positive ions. When positive electric current is applied to the Anode, it causes the diode to become forward biased and allows current to flow freely through the device. In addition, the 1N5402 has built-in protection against excessive current and thermal derating, making them an ideal choice for situations that require reliable current rectification with fast switching.
Conclusion
Overall, the 1N5402 diode is a general purpose diode widely used in different types of applications. The 1N5402 is a basic diode rectifier that allows current to flow freely through the device when forward biased and blocks any current when the voltage across the contacts is reversed. It is a three-terminal device with two anode terminals and a single cathode terminal, and it has built-in protection against excessive current and thermal derating.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5401RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 100V 3A AX... |
1N5400RLG | ON Semicondu... | -- | 2400 | DIODE GEN PURP 50V 3A DO2... |
1N5402RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 200V 3A DO... |
1N5406RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5406-T | Diodes Incor... | 0.08 $ | 20400 | DIODE GEN PURP 600V 3A DO... |
1N5402-T | Diodes Incor... | -- | 16800 | DIODE GEN PURP 200V 3A DO... |
1N5404-T | Diodes Incor... | -- | 13200 | DIODE GEN PURP 400V 3A DO... |
1N5401-T | Diodes Incor... | 0.08 $ | 6000 | DIODE GEN PURP 100V 3A DO... |
1N5404-E3/54 | Vishay Semic... | -- | 15400 | DIODE GEN PURP 400V 3A DO... |
1N5408-E3/54 | Vishay Semic... | -- | 22400 | DIODE GEN PURP 1KV 3A DO2... |
1N5401-E3/54 | Vishay Semic... | -- | 2800 | DIODE GEN PURP 100V 3A DO... |
1N5403-E3/54 | Vishay Semic... | -- | 2800 | DIODE GEN PURP 300V 3A DO... |
1N5408G A0G | Taiwan Semic... | 0.11 $ | 5500 | DIODE GEN PURP 1KV 3A DO2... |
1N5416 | Microsemi Co... | -- | 328 | DIODE GEN PURP 100V 3A AX... |
1N5420 | Microsemi Co... | 6.22 $ | 257 | DIODE GEN PURP 600V 3A AX... |
1N5417 | Microsemi Co... | 6.22 $ | 78 | DIODE GEN PURP 200V 3A AX... |
1N5418 | Microsemi Co... | -- | 230 | DIODE GEN PURP 400V 3A B-... |
1N5401-G | Comchip Tech... | 0.05 $ | 8400 | DIODE GEN PURP 100V 3A DO... |
1N5408G | ON Semicondu... | -- | 22800 | DIODE GEN PURP 1KV 3A DO2... |
1N5400G | ON Semicondu... | -- | 3915 | DIODE GEN PURP 50V 3A DO2... |
1N5404G | ON Semicondu... | 0.27 $ | 4844 | DIODE GEN PURP 400V 3A DO... |
1N5406G | ON Semicondu... | 0.27 $ | 3923 | DIODE GEN PURP 600V 3A DO... |
1N5401G | ON Semicondu... | 0.27 $ | 3178 | DIODE GEN PURP 100V 3A AX... |
1N5407RLG | ON Semicondu... | -- | 6000 | DIODE GEN PURP 800V 3A AX... |
1N5402-B | Diodes Incor... | 0.29 $ | 2644 | DIODE GEN PURP 200V 3A DO... |
1N5408-B | Diodes Incor... | 0.29 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
1N5404-B | Diodes Incor... | 0.29 $ | 670 | DIODE GEN PURP 400V 3A DO... |
1N5406G A0G | Taiwan Semic... | 0.1 $ | 500 | DIODE GEN PURP 600V 3A DO... |
1N5407G A0G | Taiwan Semic... | 0.1 $ | 500 | DIODE GEN PURP 800V 3A DO... |
1N5400G-T | Diodes Incor... | 0.08 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
1N5401G-T | Diodes Incor... | 0.08 $ | 1200 | DIODE GEN PURP 100V 3A AX... |
1N5408G-T | Diodes Incor... | 0.08 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
1N5404-G | Comchip Tech... | 0.08 $ | 2400 | DIODE GEN PURP 400V 3A DO... |
1N5404G-T | Diodes Incor... | 0.08 $ | 10800 | DIODE GEN PURP 400V 3A DO... |
1N5408GP-TP | Micro Commer... | 0.12 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
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