| Allicdata Part #: | 1N5406-TPTR-ND |
| Manufacturer Part#: |
1N5406-TP |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Micro Commercial Co |
| Short Description: | DIODE GEN PURP 600V 3A DO201AD |
| More Detail: | Diode Standard 600V 3A Through Hole DO-201AD |
| DataSheet: | 1N5406-TP Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 5µA @ 600V |
| Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | DO-201AD, Axial |
| Supplier Device Package: | DO-201AD |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Base Part Number: | 1N5406 |
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1N5406-TP is a single-phase silicon rectifier with a maximum reverse blocking voltage of 600 volts and an average rectified forward current of 3 amps. The 1N5406-TP is part of a popular family of silicon semiconductor rectifiers used for wide-range power conversion, rectification, current-carrying, and switching applications.
The 1N5406-TP is constructed from silicon die bonded two bonded to an anode and a cathode. The Fused-Emitter Structure (FES) construction enhances the device\'s thermal properties, making it ideal for high-temperature, long-term operation. It also has a low reverse leakage current and low forward voltage drop. Additionally, the 1N5406-TP offers excellent surge capability, reverse-recovery time, and thermal resistance.
The 1N5406-TP silicon rectifier is primarily used in power supplies, switching regulators and circuits that require an efficient, reliable rectifier device. It is also well-suited for general purpose rectification, battery chargers, DC/AC or AC/DC converters, phase control circuits, and inductive heating. Even when used in environments with high temperatures or high altitude, the 1N5406-TP maintains its electrical performance and reliability.
1N5406-TP single-phase silicon rectifiers work by allowing current to flow in either direction and by blocking current in the opposite direction. In the forward direction, current flows easily, producing the desired result with a low voltage drop. In the reverse direction, current is prevented from passing, ensuring stable power regulation and protection of other circuits.
The 1N5406-TP silicon rectifier is also unique in that it offers low forward voltage and high current capability. This allows it to operate efficiently in applications where considerable power is necessary, such as in home appliances, motors and transformers. Additionally, the 1N5406-TP has an extremely low reverse leakage current, which helps reduce power consumption. Therefore, it can operate reliably and economically in power conversion, rectification, current-carrying and switching applications.
Due to its superior operating characteristics, the 1N5406-TP single-phase rectifier is a popular choice for a variety of applications. It is easy to install, requires minimal power consumption and provides the user with stable power operation and circuit protection. As a result, the 1N5406-TP is an ideal solution for power conversion, rectification, current-carrying and switching applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N5420US | Microsemi Co... | 8.63 $ | 1000 | DIODE GEN PURP 600V 3A D5... |
| 1N5408-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5400-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5406TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5404GP-E3/54 | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| 1N5408GP-E3/54 | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5406T-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5406RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5401G-T | Diodes Incor... | 0.08 $ | 1200 | DIODE GEN PURP 100V 3A AX... |
| 1N5404GP-TP | Micro Commer... | 0.11 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| 1N5408-B | Diodes Incor... | 0.29 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5404-E3/73 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| 1N5405 | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 500V 3A DO... |
| 1N5401-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 3A DO... |
| 1N5402-G | Comchip Tech... | 0.06 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| 1N5401-E3/54 | Vishay Semic... | -- | 2800 | DIODE GEN PURP 100V 3A DO... |
| 1N5400 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5415US | Microsemi Co... | 6.31 $ | 1000 | DIODE GEN PURP 50V 3A D5B... |
| 1N5406-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 3A DO... |
| 1N5401 | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 3A DO... |
| 1N5418-TAP | Vishay Semic... | 0.25 $ | 1000 | DIODE AVALANCHE 400V 3A S... |
| 1N5408TA | SMC Diode So... | 0.06 $ | 1000 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5408GP-TP | Micro Commer... | 0.12 $ | 1200 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5400GHA0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
| 1N5407-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5401G R0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
| 1N5407G B0G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5417-TAP | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 3A S... |
| 1N5406G | ON Semicondu... | 0.27 $ | 3923 | DIODE GEN PURP 600V 3A DO... |
| 1N5401G | ON Semicondu... | 0.27 $ | 3178 | DIODE GEN PURP 100V 3A AX... |
| 1N5408-E3/54 | Vishay Semic... | -- | 22400 | DIODE GEN PURP 1KV 3A DO2... |
| 1N5418 | Microsemi Co... | -- | 230 | DIODE GEN PURP 400V 3A B-... |
| 1N5407TA | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
| 1N5407G | ON Semicondu... | 0.27 $ | 6900 | DIODE GEN PURP 800V 3A AX... |
| 1N5401-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
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1N5406-TP Datasheet/PDF