1N5550 Discrete Semiconductor Products |
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Allicdata Part #: | 1N5550-ND |
Manufacturer Part#: |
1N5550 |
Price: | $ 6.70 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 200V 3A AXIAL |
More Detail: | Diode Standard 200V 3A Through Hole |
DataSheet: | 1N5550 Datasheet/PDF |
Quantity: | 421 |
1 +: | $ 6.08580 |
10 +: | $ 5.47722 |
25 +: | $ 4.99036 |
100 +: | $ 4.50349 |
250 +: | $ 4.13834 |
500 +: | $ 3.77320 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 9A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 1µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | B, Axial |
Supplier Device Package: | -- |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The 1N5550 is a single-phase, glass passivated, silicon rectifier primarily used to provide effective rectification in transformer-coupled low-power lube-oil systems. With its low forward voltage drop, it is well suited to serve as the rectifying component in DC-to-DC converters, switch-mode power supplies, and line-operated applications. Additionally, this device is well suited to serve as a replacement device, filling the needs of all Silicon Rectifier circuits.
The 1N5550 is manufactured using a glass-passivated die construction which ensures the devices low forward voltage drop and excellent reverse leakage capabilities. Its semiconductor properties combine with glass-passivation to provide good performance in a variety of challenging environment. Rugged construction techniques coupled with rigorous quality assurance procedures enable the 1N5550 to perform in excellent fashion throughout its rated temperature and voltage range.
The working principle of a 1N5550 is similar to other diodes, such as a Zener or Schottky, but it differs in that it has a high breakdown voltage. This high breakdown voltage allows for a larger gap between negative and positive voltages when the power is on, allowing the device to act as an electronic switch. When the applied current is off, the 1N5550 diverts excess current back to the source and blocks it from flowing forward, thus protecting other components in the circuit.
The primary uses of the 1N5550 are in applications that require effective rectification. These include DC-to-DC converters, switch-mode power supplies, line-operated applications, and as a replacement device for all Silicon Rectifier circuits. It has a high forward voltage drop due to its glass-passivated construction, making it very efficient in rectifying power. Because of its low forward voltage drop, it is well suited to replacing aged Silicon Rectifier diodes. The device is also capable of offering superior protection and can even be used in critical circuits.
The 1N5550 has the capability to support a variety of design requirements, including even the most challenging. Along with its glass-passivation construction, its rugged features, such as its temperature and voltage range, ensure optimal performance and are designed to withstand harsh conditions. The effectiveness of all these features makes the 1N5550 an ideal selection for any design application.
The specific data is subject to PDF, and the above content is for reference
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