Allicdata Part #: | 1N5554C.TR-ND |
Manufacturer Part#: |
1N5554C.TR |
Price: | $ 2.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Semtech Corporation |
Short Description: | DIODE GEN PURP 1KV 5A AXIAL |
More Detail: | Diode Standard 1000V 5A Through Hole Axial |
DataSheet: | 1N5554C.TR Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 2.41580 |
1000 +: | $ 2.03742 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 1µA @ 1000V |
Capacitance @ Vr, F: | 92pF @ 5V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -- |
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1N5554C.TR application field and working principle
1N5554C.TR is a type of rectifier diode that has a variety of practical applications. This diode is commonly used in high-frequency circuits, like power supplies and amplifiers, to convert alternating currents into direct currents. This diode is an imposing device which offers excellent temperature and surge performance with its ultimate power. The 1N5554C.TR has a maximum repetitive peak reverse voltage of 50V, and an average forward current of 1A. It also has a maximum PSRP forward voltage of 1.8V and a peak reverse current of 15mA. The 1N5554C.TR utilizes a junction that is innovative, allowing it to have very low forward voltage drops at high currents. This device has many practical applications, and can be used for general purpose power supplies, switching power supplies, and power converters. It is a fast-switching diode, which can greatly reduce switch-on and switch-off times.The operating principle of 1N5554C.TR rectangle diodes can be explained from the principle of PN junction. PN junction is the junction between n type semiconductor material and p type semiconductor material, in which most electrons move from n-type material to p-type material and holes move from p-type material to n-type material. As the diode is forward biased the junction between p-type and n-type is formed and current is allowed to pass through the diode. In the reverse biased when the voltage across the PN junction is greater than the break down voltage, no current is allowed to pass through the diode. When the diode is in forward biased then there is a small voltage drop at the PN junction which can be considered as its forward voltage. The 1N5554C.TR diode can also be used for the protection of circuits in circuits like TV sets, voltage regulators and rectifier circuits. The voltages generated by these devices can damage the other components connected in the circuit, hence the 1N5554C.TR diode is used for protection as it will short circuit the high voltage and thus protect the circuit from any damage.Overall, the 1N5554C.TR rectangle diode is a unique semiconductor device which provides a great performance in applications like power supplies, rectification and other high frequency applications. Along with its ultimate power, it offers excellent surge and temperature performance. With the help of its innovative junction, it is able to have very less forward voltage drops at high currents.
The specific data is subject to PDF, and the above content is for reference
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