1N5554 Discrete Semiconductor Products

Series:	--
Packaging:	Bulk
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	1000V
Current - Average Rectified (Io):	3A
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 9A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	2µs
Current - Reverse Leakage @ Vr:	1µA @ 1000V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	B, Axial
Supplier Device Package:	--
Operating Temperature - Junction:	-65°C ~ 175°C

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 1N5554 is a single, encapsulated, silicon p-n junction rectifier. It is a highly reliable component that is used extensively in low power rectification applications, such as automotive and power electronics, as well as in general purpose applications.The 1N5554 diode has a forward voltage drop of 1.8 to 2.3V at 1A, and a reverse leakage current of 100 mA (max). Its average rectified output current of 1A and forward voltage of 1.8V makes it an ideal component for low power rectification applications.The 1N5554 also has several special features, including low forward voltage drop, double side collimation, and low reverse leakage current. These features make it suitable for applications where higher power rectification is required and for applications where the diode needs to be continuously subjected to high current levels.The working principle of the 1N5554 can be explained in two stages. Firstly, when a voltage is applied across the terminals of the diode, electrons and electron holes are generated at the junction of the P-type material and the N-type material. This causes a current to flow in the forward direction. This current is dependent on the junction properties, such as the doping levels of the different materials and the applied voltage. The second stage is what occurs when the voltage across the diode is reversed. When a reverse voltage is applied to the diode, a depletion layer is formed around the P-N junction. This depletion layer acts as a barrier and essentially blocks the flow of current in the reverse direction. Consequently, the diode exhibits its rectifying characteristic by passing current in the forward direction only. This process is known as the rectification effect.The 1N5554 diode is most commonly used in low power applications such as automotive and power electronics, as well as in general purpose applications. It is also used in switching applications such as voltage regulators, AC/DC converters, inverters, and voltage multipliers.In automotive applications, the 1N5554 is used as a rectifier for automotive alternators, headlights, instrument lighting, and music systems. In power electronics, it is used for battery charging, speed control, and distribution of power. In general purpose applications, it is used for phase control, power conversion, and power switching. The 1N5554 diode is also used in voltage multipliers, which are used to obtain a high voltage output from a low voltage source. In this application, the voltage is increased by a factor of two.Overall, the 1N5554 is a reliable and highly useful semiconductor component that can be used in a variety of applications, from automotive and power electronics to general purpose applications. It provides excellent rectifying characteristics and is capable of withstanding high currents and temperatures. The diode exhibits low forward voltage drop and low reverse leakage current, making it ideal for use in low power applications. Additionally, the 1N5554 is also used in switching applications and voltage multipliers to obtain a higher voltage output.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description