Allicdata Part #: | 1N960B_T50R-ND |
Manufacturer Part#: |
1N960B_T50R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 9.1V 500MW DO35 |
More Detail: | Zener Diode 9.1V 500mW ±5% Through Hole DO-35 |
DataSheet: | 1N960B_T50R Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 9.1V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 7.5 Ohms |
Current - Reverse Leakage @ Vr: | 25µA @ 6.9V |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Base Part Number: | 1N960 |
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The 1N960B_T50R is a popular diode in the Zener diode category. This device is classified as a single diode, meaning that it does not consist of several diodes in series or in parallel. It is a very useful component for a variety of applications due to its high rapidity, low forward voltage drop, and low-voltage operation.
The physical structure of the 1N960B_T50R is an axial leaded package. The leads surround a small glass encapsulated body. The component is made of an alloyed anode which is coated with a P-type semiconductor material. This material is used to create a negative temperature coefficient (NTC).
The 1N960B_T50R is designed to be mounted in any radial direction for a tight fit. It is important to keep the component in its correct orientation or it may not work properly. It can be used in either a single- or double-ended configuration.
The major application field of the 1N960B_T50R is as a Zener reference diode. This diode is used in many applications including circuit protection, overvoltage protection, voltage regulation, current regulation, electrically ignited gas discharge tubes, and DC power supplies.
The working principle of the 1N960B_T50R is quite simple. The P-type semiconductor material surrounding the alloyed anode creates a barrier that prevents current from flowing in between the cathode and the anode. When a voltage above the Zener breakdown voltage is applied to the Zener diode, the P-type semiconductor material is reversed biased, causing it to breakdown and allowing a current to flow. The current is limited by the Zener voltage, thus regulating the voltage across the diode. By controlling the degree of breakdown, the diode can be used for various applications such as voltage regulation or overvoltage protection.
The 1N960B_T50R is a versatile and reliable diode with a wide range of applications. It is an effective way to protect and regulate voltage in electrical circuits. Its fast response time, low forward voltage drop, and low-voltage operation make it a great choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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