1N965B_T50A Allicdata Electronics
Allicdata Part #:

1N965B_T50A-ND

Manufacturer Part#:

1N965B_T50A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 15V 500MW DO35
More Detail: Zener Diode 15V 500mW ±5% Through Hole DO-35
DataSheet: 1N965B_T50A datasheet1N965B_T50A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 15V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 16 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 11.4V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Base Part Number: 1N965
Description

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Diodes are a type of semiconductor device utilized to control the flow of current in an electrical circuit. The most common use of diodes is in the form of rectifiers, allowing electricity to flow one direction but blocking the flow in the opposite direction. Zener diodes are a special type of diode that can be used for a variety of applications and the 1N965B_T50A is one such example. In this article, we will look at the 1N965B_T50A application field and working principle.

The 1N965B_T50A is specifically designed for electronic circuit applications. It can be used as part of an over-voltage protection network, for example. It is also used for device protection against transient electrical surges, for voltage regulator circuits, or for other general purpose applications. The 1N965B_T50A provides a number of benefits over conventional diodes due to its increased efficiency and lower breakdown voltage.

The working principle behind the 1N965B_T50A is based on the characteristic known as “zener breakdown”. This is the process that occurs when electrons within the diode become excited, or “heated up”, due to an increase in the voltage applied. The electrons then become mobile, for a period of time, across the junction between the P-type and N-type semiconductor layers. This then generates a current in the diode. The breakdown voltage, or the voltage at which the diode “breaks down” and begins to conduct, is a constant for all diodes.

While the basic structure of the 1N965B_T50A is similar to other types of diodes, its working principle is quite different. The P-type and N-type semiconductor layers are arranged in what is known as an “Algaas” structure, giving the diode a higher efficiency than other types. This also means that it can be used in more applications, and can handle a higher breakdown voltage than regular diodes.

The main advantage of the 1N965B_T50A has to do with its efficiency and its ability to tolerate higher voltage. This makes it a very useful component for a variety of electronic device applications. It is also cheaper than other types of diodes, making it a great cost-saving component in many projects.

Despite its usefulness and high efficiency, the 1N965B_T50A does have a few drawbacks. One of the most notable is its inability to handle high voltages. It will breakdown at a fixed voltage, and any higher voltages than that can cause the diode to burn out, leading to permanent damage. Additionally, its current carrying capacity is also quite low.

In conclusion, the 1N965B_T50A is a useful diode for a variety of applications. It has a high efficiency and can tolerate higher voltages than regular diodes, but with a few drawbacks such as its inability to handle high voltages and its low current carrying capacity. It can be used as part of an over-voltage protection network and is suitable for use in electronic circuits, device protection, voltage regulation or other general purpose applications.

The specific data is subject to PDF, and the above content is for reference

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