1PGSMA160ZHR3G

Diodes - Zener - Single

1PGSMA160ZHR3G

The 1PGSMA160ZHR3G is a single zener diode that allows only the flow of current in the forward direction, while blocking current in the reverse direction. It is composed of two regions of semiconductor that are joined together. A highly doped N-type semiconductor is connected to a less doped P-type semiconductor. This forms the “P-N junction” which creates a depletion region that acts as a barrier.

The 1PGSMA160ZHR3G’s application field includes ESD protection, bias regulation, and voltage clamping. As an ESD protection device, it can protect components, circuits, and other terminals from damage caused by electrostatic discharge and transients. By connecting the diode in parallel across the load, the zener diode\'s forward direction current will become “open” and the reverse breakdown voltage will be minimized. As a bias regulator, the silicon zener diode can be used to maintain a constant voltage for small current devices with a sufficiently low impedance. As a voltage-clamping device, the zener diode is designed to limit the peak voltage on a given circuit to a set level. The zener diode can be connected in parallel across the load to act as a voltage clamp and convert the voltage from an alternating current into a direct current, thus preventing damages to electronic components.

The working principle of the 1PGSMA160ZHR3G is based on the breakdown voltage of the p-n junction. The P-type semiconductor is a lightly doped semiconductor with a high resistivity, while the N-type is heavily doped which gives it a low resistivity. When the two semiconductors are joined, a depletion region appears between them caused by the transfer of electrons from the N-type to the P-type semiconductor, resulting in a strong electric field. When the voltage across the junction is increased to a certain point, the electric field becomes so strong that it overcomes the barrier potential and becomes a conductive path for current.

The 1PGSMA160ZHR3G has a zener breakdown voltage of 16V, maximum peak reverse power of 800mW and is specified for operating temperatures ranging from -55°C to +175°C. It is available in DO-214AC and SMA packages.

In conclusion, the 1PGSMA160ZHR3G is a single zener diode designed for ESD protection, bias regulation and voltage clamping. It is composed of two regions of semiconductor that are joined together, forming the “P-N junction”, the breakdown voltage of which is used to regulate the current flow. The maximum peak reverse power of the diode is 800mW and is available in DO-214AC and SMA packages.