1PGSMA4746HR3G Allicdata Electronics

1PGSMA4746HR3G Discrete Semiconductor Products

Allicdata Part #:

1PGSMA4746HR3GTR-ND

Manufacturer Part#:

1PGSMA4746HR3G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER
More Detail: Zener Diode 18V 1.25W ±5% Surface Mount DO-214AC (...
DataSheet: 1PGSMA4746HR3G datasheet1PGSMA4746HR3G Datasheet/PDF
Quantity: 1000
1800 +: $ 0.07275
3600 +: $ 0.06669
5400 +: $ 0.06265
12600 +: $ 0.05860
45000 +: $ 0.05389
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 18V
Tolerance: ±5%
Power - Max: 1.25W
Impedance (Max) (Zzt): 20 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 13.7V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Description

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The diode 1PGSM14746HR3G is a single Zener diode that is used for numerous applications where high temperature stability and quality performance are necessary. This diode is manufactured from high-purity silicon substrate, which provides superior linearity, excellent thermal dissipation and wide bands of immunity. As a single Zener diode, the 1PGSM14746HR3G has a control of the reverse breakdown voltage, a low maximum reverse voltage, and an automated and uniform reverse current.

The 1PGSM14746HR3G is especially suited for use in applications requiring high-temperature stability, such as automotive electronics, consumer electronics, and medical electronics, as well as in military and aerospace systems. The diode also features a high power dissipation, high insulation resistance and low net capacitance. These features provide superior reliability and high overall performance.

The 1PGSM14746HR3G may be used for a variety of electrical purposes such as voltage regulation, current regulation, noise reduction and signal routing. The 1PGSM14746HR3G diode is particularly useful for protection of circuits from overloads, overvoltages, and electrostatic discharge. Its low maximum reverse current and high insulation resistance also provide superior protection against short-circuit failure.

The working principle of the 1PGSM14746HR3G is based on the property of a diode, which is that when forward biasing of PN junction occurs, current starts to flow from the more positive anode to the more negative cathode. When the reverse bias of the PN junction occurs, current between the anode and cathode is limited due to the depletion layer. When a certain peak reverse voltage is applied, the depletion layer widens, allowing a small current to flow (Zener current).

The 1PGSM14746HR3G single Zener diode is designed to protect electronic circuits from being subjected to excessive voltages or damaging electrical disturbances. The diode is designed to provide a stable, repeatable, and reliable voltage regardless of temperature or load fluctuations in the circuit. By virtue of its high-temperature stability, the 1PGSM14746HR3G can be used in harsh environments.

The 1PGSM14746HR3G is a versatile single Zener diode that offers excellent overall performance for numerous applications. With a control of the reverse breakdown voltage, a low maximum reverse voltage, and an automated and uniform reverse current, the 1PGSM14746HR3G can be used for voltage regulation, current regulation, noise reduction, signal routing, and protection of circuits from overloads and overvoltages.

The specific data is subject to PDF, and the above content is for reference

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