| Allicdata Part #: | 1PGSMA4749R3GTR-ND |
| Manufacturer Part#: |
1PGSMA4749 R3G |
| Price: | $ 0.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE ZENER |
| More Detail: | Zener Diode 24V 1.25W ±5% Surface Mount DO-214AC (... |
| DataSheet: |  1PGSMA4749 R3G Datasheet/PDF |
| Quantity: | 1000 |
| 1800 +: | $ 0.07594 |
| 3600 +: | $ 0.06835 |
| 5400 +: | $ 0.06455 |
| 12600 +: | $ 0.05885 |
| 45000 +: | $ 0.05506 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 24V |
| Tolerance: | ±5% |
| Power - Max: | 1.25W |
| Impedance (Max) (Zzt): | 25 Ohms |
| Current - Reverse Leakage @ Vr: | 1µA @ 18.2V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AC, SMA |
| Supplier Device Package: | DO-214AC (SMA) |
Description
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The 1PGSMA4749 is a R3G single zener diode specifically designed for field application. It has a total power dissipation of 0.225w and a zener voltage of 6.2v with a tolerance of +/-5%. The diode itself is a four layer PNPN structure which was developed specifically for the military environmental stress screening (ESD).
The diode is mainly used for the protection of integrated circuit like microprocessors, logic cells, and application specific integrated circuits (ASICs) from damaging electrostatic discharge (ESD) caused by static electricity. It also increases the reliability of electronic equipment with the greatest application being power supplies, circuit protection, and communication systems.
The operating characteristics of the 1PGSMA4749 are typically similar to those of other single zener diodes, but it has been constructed to much better withstand thermal shock as well as ESD exposure. Its breakdown voltage is specified at greater temperatures than normal, thus making the device more reliable in unpredictable and hostile environments. It also features superior electrostatic discharge protection of up to 25kV.
The working principle of the 1PGSMA4749 is relatively simple. When the anode voltage is negative with respect to the cathode, the diode is in its off-state, allowing virtually no current to pass through it. When the anode voltage is forward-biased with respect to the cathode, the current turns on and the zener breakdown voltage is reached. At the zener breakdown voltage, a large avalanche current is produced and the zener diode operates in its on-state.
The zener diode provides protection against ESD in two ways. Firstly, the diode’s high-impedance state, in combination with its low-impedance breakdown state, acts as an energy sink, effectively absorbing and dissipating the ESD pulse energy. Secondly, the diode’s reverse-bias breakdown voltage is much greater than the normal operational Vcc levels; this allows the ESD pulse to pass through the device without causing any permanent damage.
Due to its robust nature and good ESD protection, the 1PGSMA 4749 is becoming a popular choice for applications where robust protection is required. It is specifically suitable for applications which operate in hostile environments, such as those found in, military and aerospace applications. The 1PGSMA4749 is fast becoming the standard choice for designers who are looking for reliable and robust ESD protection.
The specific data is subject to PDF, and the above content is for reference
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