1PGSMA4750 R3G Allicdata Electronics
Allicdata Part #:

1PGSMA4750R3GTR-ND

Manufacturer Part#:

1PGSMA4750 R3G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER
More Detail: Zener Diode 27V 1.25W ±5% Surface Mount DO-214AC (...
DataSheet: 1PGSMA4750 R3G datasheet1PGSMA4750 R3G Datasheet/PDF
Quantity: 1000
1800 +: $ 0.07594
3600 +: $ 0.06835
5400 +: $ 0.06455
12600 +: $ 0.05885
45000 +: $ 0.05506
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 27V
Tolerance: ±5%
Power - Max: 1.25W
Impedance (Max) (Zzt): 35 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 20.6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Description

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Introduction

The 1PGSMA4750 R3G is a single Zener diode commonly used in application fields such as data communications, automotive, and telecommunications. It has a reverse-breakdown voltage of 3.3V, an operating temperature range of -65°C - +150°C, and a zero-voltage-drop diode in a SOT23 package. In addition, the device is compliant with halogen-free, lead-free, and RoHS directives.

Application Field and Working Principle

The 1PGSMA4750 R3G is mainly used in data communications and automotive applications. It is well suited to these applications because it features an extended temperature range, a high level of accuracy, low forward voltage drop, and low switching noise. The 1PGSMA4750 R3G is also suitable for use in telecommunications because it has a low profile, fewer pins per device, and it meets the Reliability Qualification Plan of European Directive EN60950-1 and its derivatives.The working principle of a Zener diode is based on the principle of avalanche breakdown. When reverse biased, an avalanche breakdown occurs when the electric field created by the applied voltage exceeds the breakdown strength of the diode. This causes a large amount of breakdown current. This breakdown current is then regulated to a value that is independent of the applied voltage. The diode operates in this breakdown region until the applied voltage is fully reversed.

Features and Benefits

The 1PGSMA4750 R3G features a high breakdown voltage rating of 3.3V and a low reverse leakage current of 1uA. It also features a low-noise, high-accuracy reference voltage. This allows the device to maintain a higher accuracy across temperature and time compared to devices with a lower voltage rating. Furthermore, the device has a maximum operating temperature rating of +150°C and an extended temperature range of -65°C - +150°C. This allows the device to be used in a range of applications under extreme temperature conditions. In addition, the device is compliant with halogen-free, lead-free, and RoHS directives. This ensures that the device is able to meet industry standards for safety and reliability. The device also features a zero-voltage-drop diode in a SOT23 package. This smaller packaging also allows for higher operational speeds and better thermal dissipation. Furthermore, the device is compatible with a range of voltage-regulated supplies, as well as open-collector and prestrobe outputs.

Conclusion

The 1PGSMA4750 R3G is a single Zener diode which is commonly used in application fields such as data communications, automotive, and telecommunications. It features an extended temperature range, a high level of accuracy, low forward voltage drop, and low switching noise. Furthermore, the device is compliant with halogen-free, lead-free, and RoHS directives, and also features a zero-voltage-drop diode in a SOT23 package.The working principle of a Zener diode is based on the principle of avalanche breakdown. When reverse biased, an avalanche breakdown occurs when the electric field created by the applied voltage exceeds the breakdown strength of the diode. This causes a large amount of breakdown current. This breakdown current is then regulated to a value that is independent of the applied voltage.

The specific data is subject to PDF, and the above content is for reference

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