20ETF02STRL

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	200V
Current - Average Rectified (Io):	20A
Voltage - Forward (Vf) (Max) @ If:	1.3V @ 20A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	160ns
Current - Reverse Leakage @ Vr:	100µA @ 200V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Operating Temperature - Junction:	-40°C ~ 150°C
Base Part Number:	20ETF02

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Introduction to 20ETF02STRLThe 20ETF02STRL is an epitaxial silicon power rectifier diode that is specifically designed for high surge applications due to its low forward voltage drop, low reverse leakage current, high breakdown voltage and high temperature resistance.20ETF02STRL Application FieldThe 20ETF02STRL features a wide range of application fields. Its power dissipation capabilities make it perfect for use as a rectifier diode in power supplies and temperature control appliances. Furthermore, it can be used in the design of high surge applications such as automotive and circuit board designs, due to its low forward voltage drop, low reverse leakage current, high breakdown voltage and high temperature resistance.20ETF02STRL Working PrincipleThe 20ETF02STRL operates on the same principle as a standard rectifier diode, however its unique construction ensures that its resistance to overload voltage is significantly improved. It is composed of two applications of N+-doped and P+-doped regions, creating a junction. When an anode voltage is applied across the junction, the electron current travelling through the N+ region is increased, resulting in the flow of electrons from the P+ region to the N+ region, creating a forward bias current.The 20ETF02STRL diode also features a reverse recovery time that is significantly shorter than that of a standard rectifier diode. This property allows it to absorb more power during its operation, while recovering more quickly when current passes through it in the reverse direction, reducing the risk of damage being caused to the circuit components.ConclusionThe 20ETF02STRL is an epitaxial silicon power rectifier diode that is specifically designed for high surge applications. Its low forward voltage drop, low reverse leakage current, high breakdown voltage, and high temperature resistance make it perfect for use in power supplies, temperature control appliances, automotive and circuit board designs, and other high surge applications. The diode operates on the same principle as a standard rectifier diode, however its unique construction ensures that its resistance to overload voltage is significantly improved, allowing it to absorb more power during its operation, while recovering more quickly when current passes through it in the reverse direction.

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