20ETF04FP

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	400V
Current - Average Rectified (Io):	20A
Voltage - Forward (Vf) (Max) @ If:	1.3V @ 20A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	160ns
Current - Reverse Leakage @ Vr:	100µA @ 400V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220AB Full-Pak
Operating Temperature - Junction:	-40°C ~ 150°C
Base Part Number:	20ETF04

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Introduction

The 20ETF04FP (Enhanced Turn-Off FET) is a low voltage, low power, single channel, N channel enhancement mode power Field Effect Transistor. It is designed primarily for applications in the automotive, industrial, and general purpose markets. This type of device is often used for power distribution and control, voltage regulation, power switching, and power conversion applications. The 20ETF04FP is a high performance, low cost, low power, single-channel Field Effect Transistor that has high Gate-Source breakdown voltage. It offers excellent performance at low voltage and high temperature operation. This device allows for fast switching with low power dissipation, making it a suitable choice for automotive, industrial, and general purpose applications.

Construction and Mechanism

The 20ETF04FP is an N-type device that consists of a thin metal Gate electrode on top of a N-type substrate. It has a Gate-Source Voltage (VGS) of 4.65 V, a Gate Leakage Current (IGSS) of 0.5 µA and a Maximum Gate-Source Voltage (VGS) of +20 V. The device has an Operating Junction Temperature (Tj) range of -40 to +105 °C and a Maximum Drain voltage of 20 V.The device has a remote channel P-region that acts as the body. This region is isolated from the substrate and the channel is connected directly to the drain. The channel region acts as a low resistance path for current and its resistance depends on the Gate-Source voltage. It is what allows it to switch rapidly between its two states: ON and OFF.When current is passing through the device, the drainage region will carry most of the current load. When the Gate Voltage is raised, the device is turned “on” and the Drain current increases. If the Gate-Source voltage is lowered, the device is turned “off” and the Drain current will decrease.

Features

The 20ETF04FP offers several high performance features such as:- High Junction Temperature (Tj): This device has an Operating Junction Temperature range of -40 to +105 °C.- Low Power Consumption: This device has a low power consumption, allowing it to be used in energy efficient applications. - High Gate-Source Breakdown Voltage: This device has a high Gate-Source breakdown voltage, allowing it to be used in a wide range of applications.- Low Gate Leakage current: This device has a low Gate leakage current, ensuring accuracy and long life.- High Operating Frequency: This device has a high operating frequency, making it suitable for high speed applications.

Applications

This device is suitable for a wide range of applications such as power supplies, voltage regulators, battery chargers, motor control circuits, home appliances, industrial control, etc. As it is a remote channel device, it is also suitable for high quality automotive applications such as ABS systems and airbag controllers.

Conclusion

The 20ETF04FP is an N-type device that is designed primarily for automotive, industrial, and general purpose applications. It has a high Gate-Source breakdown voltage and a low Gate leakage current, making it a suitable choice for low power applications. Its low power consumption and high operating frequency make it suitable for high speed applications. It is also a high quality device, so it can be used in automotive applications such as ABS systems and airbag controllers.

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