Allicdata Part #: | 2N4029-ND |
Manufacturer Part#: |
2N4029 |
Price: | $ 6.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 80V 1A TO-18 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 1A 500mW Through... |
DataSheet: | 2N4029 Datasheet/PDF |
Quantity: | 1000 |
101 +: | $ 6.09440 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 100mA, 1A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 5V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-18 |
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The 2N4029 transistor is a NPN silicon planar epitaxial transistor. It has a maximum power dissipation of 540 mW and a maximum peak base current of 100 mA. The collector-emitter voltage and collector current ratings of the 2N4029 are 500 volts and 100 mA, respectively. The maximum operating temperature is 175°C. This small signal transistor is widely used in various electronic circuits including amplifiers, oscillators, regulators, detectors and relays. The 2N4029 is available in various packages such as TO-39, TO-92, and SOT-223.
Application Field
The 2N4029 is widely used in various circuits requiring current gain, switching, impedance and noise control. Its low current gain and fast switching make it one of the most widely used transistors for low-power applications. It is suitable for low-level amplifier applications such as pre-amplifiers and audio amplifiers, as well as switching circuits such as logic gates, relays and solid-state relays. Additionally, the 2N4029 can be used to control the impedance of transmission lines and to reduce noise in RF amplifiers.
Working Principle
The 2N4029 is a NPN bipolar junction transistor (BJT) with three terminals. The three terminals are known as the emitter, base, and collector. It operates in the active region, meaning that more than one terminal is driven by an applied voltage source. This type of transistor is commonly used in amplifier circuits. When a voltage is applied to the base, it creates an electric field between the base and emitter. This electric field attracts electrons in the emitter and results in a current flow between the emitter and the collector. This current amplification process is known as current gain. The current gain of the 2N4029 is low, typically ranging from 10 to 50.
The 2N4029 can be used as an amplifier when the base-emitter voltage is increased. In an amplifier circuit, the voltage applied to the base controls the amount of current flowing between the emitter and collector. As the voltage applied to the base increases, the current flowing from the emitter to collector also increases. This amplified current is then used to drive the load. The 2N4029 can also be used as a switch, which is achieved by cutting off the base-emitter current. When the voltage applied to the base is reduced, the electric field between the base and emitter is reduced, decreasing the current flowing between the emitter and collector. This causes the transistor to act as an open switch.
The 2N4029 transistor is a versatile and reliable transistor for low-power applications. Its low current gain and fast switching make it an excellent choice for amplifier and switching circuits. Additionally, its low power dissipation and high voltage and current ratings make it a robust and reliable transistor for various circuits. Due to these characteristics, the 2N4029 is an ideal choice for low-power circuits requiring current gain, switching, impedance and noise control.
The specific data is subject to PDF, and the above content is for reference
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