Allicdata Part #: | 2N4058-ND |
Manufacturer Part#: |
2N4058 |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | THROUGH-HOLE TRANSISTOR-SMALL SI |
More Detail: | Bipolar (BJT) Transistor PNP 30V 200mA 625mW Thro... |
DataSheet: | 2N4058 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.19184 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 700mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100µA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92 |
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2N4058 is a PNP Bipolar Transistor with application fields in high-frequency switching circuits, low-noise amplifiers, amplifiers, and headphone amplifiers. It has a continuous collector current rating of 500 mA, a maximum collector-base voltage of 100 V, a maximum collector-emitter current of 500 mA, and an hFE between 10 and 100. It is offered in a TO-220 package.
The transistor’s working principle is based on current flowing through three junctions: the emitter junction, the collector junction, and the base junction. In this way, current between one junction, the emitter, and the others, the collector and base, can be regulated by controlling the current at the base. The base has become the control element.
When a voltage is applied to the base, the current in the emitter and collector terminals is increased. This increase in current is known as the “transistor gain”, and is determined by hFE, the “Current Gain” of the device. The current must be large enough to achieve the required gain, but small enough so that the device does not overheat. Thus, the amount of current is limited by the device’s thermo-electrical characteristics.
A small current can create a large current in the collector-emitter region for the 2N4058 transistor. This increased current can be used to switch other devices on and off, which makes it useful for high-frequency switching applications. In addition, the low noise created by the transistor makes it useful in low-noise amplifiers. The transistor’s ability to withstand large reverse voltages makes it a good choice for high voltage applications.
The 2N4058 transistor can also be used in headphone amplifiers. It can be used in these applications because it can deliver high current while having low noise, high voltage gains, and a low thermal resistance. This helps to reduce distortion and improves sound quality. The transistor also has low power consumption, which makes it a good choice for battery powered applications.
In conclusion, the 2N4058 transistor has many applications in high-frequency switching circuits, low-noise amplifiers, amplifiers and headphone amplifiers. Its working principle is based on current flowing through three junctions, the emitter, collector, and base, and its ability to achieve a large current gain with a small base current. It also has a low power consumption, making it a good choice for battery powered applications.
The specific data is subject to PDF, and the above content is for reference
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