2N4093

Series:	Military, MIL-PRF-19500/431
Packaging:	Bulk
Part Status:	Discontinued at Digi-Key
FET Type:	N-Channel
Voltage - Breakdown (V(BR)GSS):	40V
Drain to Source Voltage (Vdss):	40V
Current - Drain (Idss) @ Vds (Vgs=0):	8mA @ 20V
Input Capacitance (Ciss) (Max) @ Vds:	16pF @ 20V
Resistance - RDS(On):	80 Ohms
Power - Max:	360mW
Operating Temperature:	-65°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-206AA, TO-18-3 Metal Can
Supplier Device Package:	TO-18

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Introduction

The 2N4093 is a JFET (Junction Field-Effect Transistor) that facilitates high impedance input and low impedance output. It is biased in the depletion mode and is designed for high input impedances and high operating temperatures. Its operation works in much the same way as other field effect transistors (FETs): an electric field is applied across an insulating gate to control the current flow between the source and drain electrodes. This allows the transistor to be used as an amplifier, an analog switch, or a controlled current source.

Application field

The 2N4093 is used in many applications, such as audio preamplification and boosting, switching circuits, RF amplification, and high frequency signal conditioning. Its built-in protection features, such as reverse bias protection and protection from electrostatic discharge, make it well suited for such applications. It is also commonly used in power converters, converters, and instrumentation amplifier circuits.In audio applications, its high input impedance and low output impedance enables it to be used as an amplifier, as well as a high-gain voltage amplifier. Its temperature range, coupled with its low power consumption make it suitable for applications where power efficiency is a priority. Additionally, its low noise characteristics make it suitable for noise-sensitive applications.In RF and high-frequency applications, the 2N4093 is used to amplify signals of various frequencies and amplitudes. Its high frequency characteristics make it suitable for high speed applications and can be used to amplify signals up to 100GHz.

Working Principle

The working principle of the 2N4093 is based on the same principle as other FETs: An electric field is applied across an insulating gate to control current flow between the source and drain electrodes. The gate-to-source voltage (VGS) is the primary parameter affecting the transistor\'s operation, controlling the current flow between the source and drain.When a positive voltage is applied to the gate, it will repel the majority carriers from the drain, increasing the resistance in the channel between the source and drain. This effect is known as "pinch-off," and is due to the electric field created by the gate.Alternatively, when a negative voltage is applied to the gate, the majority carriers will be attracted to the drain, decreasing the resistance in the channel. This is known as the "depletion" mode, and is the ideal mode of operation for many applications.In both cases, the amount of current flowing between the source and drain can be controlled by adjusting the gate voltage. This makes the 2N4093 an ideal choice for switching and analog amplifier applications.

Conclusion

The 2N4093 is a versatile, high-performance JFET that can be used for a variety of applications. Its high impedance input and low impedance output, coupled with its wide temperature range and low power consumption make it suitable for a wide range of audio, RF, and high-frequency applications. Its working principle is based on the same principle as other FETs: An electric field is applied across an insulating gate to control current flow between the source and drain. By adjusting the gate voltage, the amount of current flowing between the source and drain can be controlled, making the 2N4093 an ideal choice for switching and analog amplifier applications.

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