Allicdata Part #: | 2N4091UB-ND |
Manufacturer Part#: |
2N4091UB |
Price: | $ 34.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | JFET N-CHAN 40V 3SMD |
More Detail: | JFET N-Channel 40V 360mW Surface Mount 3-UB (3.09... |
DataSheet: | 2N4091UB Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 30.93980 |
Series: | Military, MIL-PRF-19500/431 |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Drain to Source Voltage (Vdss): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 30mA @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 16pF @ 20V |
Resistance - RDS(On): | 30 Ohms |
Power - Max: | 360mW |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | 3-UB (3.09x2.45) |
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2N4091UB Application Field and Working Principle
A 2N4091UB is a type of Field-Effect Transistor (FET), commonly known as a JFET. It is an n-channel device; its main characteristic is its internally set depletion mode which enhances its high input resistance. This makes them highly suitable for many electronic applications such as in amplifiers and various control systems.
JFETs are a type of FET which uses a gate voltage to control the level of conduction through its source to drain interfaces. This control is achieved through the application of an electric field across the exposed channel which is set between two oppositely doped semiconductor regions. As this electric field is increased, the behavior of the transistor is changed and its conductivity may be regulated or disrupted depending on the electric field’s characteristics.
The 2N4091UB is a special type of JFET, specifically designed for use in high frequency applications such as audio pre-amplifiers and transimpedance amplifiers. It is composed of a silicon region which, when exposed to a voltage, adjusts its characteristics in order to carry out its task, such as amplifying or controlling signals. Generally speaking, the 2N4091UB is considered a low-noise device which incorporates a low saturation gate voltage, making it well-suited for precision audio and low-voltage sensing applications.
In terms of operation, the 2N4091UB typically works by allowing electrons to conduct through its source and drain junctions when the gate voltage is such that a depletion region exists across the p-type and n-type semiconductor materials. This depletion region reduces the magnitude of the electric field in the channel between the source and the drain, resulting in an increase in the current flow. Conversely, when the gate voltage is greater than the “breakdown” voltage of the device, the depletion region is depleted and the electron current is reduced due to the increased magnitude of the electric field across the channel.
A 2N4091UB may also be used in many configurations such as the common-source, source-follower, current-sourced, and available current amplifiers. In addition to these, they may also be found in various logic applications, such as logic gate delay lines, and comparator devices. It is commonly employed as a replacement for bipolar transistors in many applications, being easier to work with and being less costly, while providing equivalent performance.
Overall, the 2N4091UB is an invaluable component in a range of electronic devices and has many versatile applications. Its wide range of possible operations and configurations, makes it a heavily utilized device, often seen in both professional and hobby settings. Thanks to its highly efficient, low-noise, depletion-mode design, the 2N4091UB represents one of the most popular and commonly used JFETs today.
The specific data is subject to PDF, and the above content is for reference
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