Allicdata Part #: | 1086-20955-ND |
Manufacturer Part#: |
2N4033UA |
Price: | $ 14.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 80V 1A |
More Detail: | Bipolar (BJT) Transistor PNP 80V 1A 500mW Surface... |
DataSheet: | 2N4033UA Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 12.82080 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 100mA, 1A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 5V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-SMD, No Lead |
Supplier Device Package: | UA |
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The 2N4033UA is a general-purpose silicon NPN transistor. It can be used in a variety of applications and has a wide range of uses. In this article, we will look at the application field and working principle of the 2N4033UA.
The 2N4033UA can be used in many different applications such as switching, amplification, switching and levels conversion. This transistor is also suitable for use in high-power audio amplifiers, radio equipment, telecommunications equipment, instrumentation and control, and other general purpose applications.
The 2N4033UA is a silicon NPN small signal transistor. Its gain band width product is 200MHz and it is capable of a current gain of 40 to 55. The collector-emitter voltage is typically 30V and the collector-base voltage is typically 40V. Its collector current is typically 250mA. The operating temperature range of the 2N4033UA is from –45 to +100OC.
The 2N4033UA is a general-purpose NPN transistor designed for use in switching and level conversion. The most common way to use this device is in an emitter follower configuration. In this configuration, the emitter follower’s base is connected to ground and the potential at the emitter is approximately 0.6 Volts lower than the base voltage. This voltage drop is significant because the emitter side of the transistor is being used as the output node of a circuit while the base side is being used as the input.
When used in an emitter follower configuration, the 2N4033UA has two main benefits. The first is that it provides current gain which is defined as the ratio of the collector current to the base current. The device has a high current gain and it can provide a stable output voltage even when the input voltage changes. The second benefit is that it has wide bandwidth and it can operate at fast switching speeds.
The 2N4033UA can also be used in a circuit as an amplifier. In this configuration, the NPN transistor is used as a common-emitter amplifier. The common-emitter configuration works by allowing the current to flow from the collector to the emitter while the voltage gain is determined by the ratio of the collector current to the base current. The 2N4033UA can deliver a voltage gain of 40 to 55 which is a fairly high level.
In addition to its use as an amplifier, the 2N4033UA can also be used as an oscillator. In this configuration, the base current from the oscillator is connected to the base of the transistor and the collector terminal of the transistor is connected to its own emitter. This allows the transistor to act as an amplifier but also allows it to generate a sine wave output.
The 2N4033UA is a versatile device which can be used in a variety of applications. It is a general-purpose silicon NPN transistor which can be used in switching, amplification, switching and level conversion. It is capable of a current gain of 40 to 55 and has a wide bandwidth and fast switching speeds. It can be used as an emitter follower or a common-emitter amplifier and can also be used as an oscillator.
The specific data is subject to PDF, and the above content is for reference
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