2N5308 Discrete Semiconductor Products |
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Allicdata Part #: | 2N5308CS-ND |
Manufacturer Part#: |
2N5308 |
Price: | $ 0.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS NPN DARL 40V 0.3A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 40V 300m... |
DataSheet: | 2N5308 Datasheet/PDF |
Quantity: | 2207 |
1 +: | $ 0.61110 |
10 +: | $ 0.53235 |
25 +: | $ 0.47174 |
100 +: | $ 0.41082 |
250 +: | $ 0.35754 |
500 +: | $ 0.30429 |
1000 +: | $ 0.24343 |
2500 +: | $ 0.22061 |
5000 +: | $ 0.20540 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.4V @ 200µA, 200mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 7000 @ 2mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 60MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92 |
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The 2N5308 is a type of bipolar junction transistor (BJT) that has a single, two-layer p-n structure. This type of transistor has a wide range of applications, including amplifiers and switches. It works by allowing electric current to flow through its three terminals: the base, the collector, and the emitter. The movement of electric current through the transistor depends on the voltage of the electric current at each terminal, which is determined by the input signal.
The 2N5308 is a commonly used transistor because it has a good gain-bandwidth ratio, which is determined by its voltage and current gains. Its gain-bandwidth ratio determines its efficiency in amplifying certain signals. This makes the 2N5308 a good choice for amplifying audio, video, and digital signals. Additionally, it has high power ratings, so it can be used to switch a wide range of electric current and voltage levels.
The 2N5308 has a large breakdown voltage and can work in wide temperature ranges. This makes it suitable for both digital and analog systems. It can also be used in circuit designs where power levels are low and precision is critical, as its precisely controlled parameters allow for highly efficient operation.
The working principle of a 2N5308 is based on the operation of the p-n junction. This type of transistor consists of two oppositely-doped semiconductor layers, the base and the collector. When the base voltage is increased, electrons flow from the emitter and into the base, creating a region of positive charge on the collector. This increased positive charge allows current to flow through the transistor, which amplifies the input signal.
The 2N5308 has a wide range of applications and is a useful component for many types of circuits. It is most commonly used in amplifiers and switches, but can also be used in digital systems, as it can handle low- and high-power inputs. Additionally, its precise control allows for high efficiency and accuracy in many applications.
The specific data is subject to PDF, and the above content is for reference
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