Allicdata Part #: | 2N5320CS-ND |
Manufacturer Part#: |
2N5320 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS NPN 75V 2A TO-39 |
More Detail: | Bipolar (BJT) Transistor NPN 75V 2A 50MHz 10W Thro... |
DataSheet: | 2N5320 Datasheet/PDF |
Quantity: | 858 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 75V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 500mA, 4V |
Power - Max: | 10W |
Frequency - Transition: | 50MHz |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 |
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The 2N5320 transistor is a high-gain, high-frequency, high-current device that is designed for use in high-level amplification, output buffer applications and general-purpose switching. It can also be used to boost the load current of applications ranging from low-level logic circuitry to high-voltage power supplies. The 2N5320 has a small-outline-transistor (SMT) package, making it suitable for use in circuits with limited space.
Applications
The 2N5320 transistor is used in audio and video amplification, phase-lock loops, motor control, computer peripherals, amplifier circuits and line drivers. It can also be used in wide-band low-noise amplifiers, current sensors and power supply models.
The 2N5320 transistor is suitable for use in mobile, consumer and multimedia applications. It is capable of providing high current, with low level gains, across a wide voltage range. Furthermore, the transistor can be used for pulse width modulation (PWM) control, and for compatibility with lower-signal-level circuits. In addition, the 2N5320 is capable of providing output currents of up to 5mA.
Working principle
The 2N5320 transistor is a bipolar junction transistor (BJT). It is an N-type device, operating with a maximum collector-emitter voltage of 20 volts. It provides high-level gains and low levels of signal amplification. The 2N5320 operates as a current source, meaning that the current output is constant regardless of input voltage.
The 2N5320 transistor has a three-terminal structure, consisting of the emitter, base and collector terminals. When the base terminal is forward biased, electrons from the emitter terminal are injected into the base region. These electrons create an avalanche effect, which results in increased current flow from the collector terminal. The current is amplified by the device, which results in increased signal levels.
The 2N5320 transistor can also be used as a switch in low and high voltage applications, depending on the gate voltage applied. When the gate voltage is low, the device acts as a closed switch and no current can pass between the collector and emitter. When the gate voltage is high, the device acts as an open switch, allowing current to flow between the collector and emitter.
Conclusion
The 2N5320 transistor is a high-gain, high-frequency, high-current device that is designed for use in high-level amplification, buffering and switching applications. It can be used for pulse-width modulation (PWM) control, current sensing and line driver applications in mobile, consumer, and multimedia applications. It has a three-terminal structure, consisting of the emitter, base and collector terminals. The 2N5320 is a BJT device and acts as a current source, providing low-level gains and high levels of signal amplification.
The specific data is subject to PDF, and the above content is for reference
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